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Amorphous Oxide Semiconductors

Amorphous Oxide Semiconductors
Author: Hideo Hosono
Publisher: John Wiley & Sons
Total Pages: 644
Release: 2022-05-17
Genre: Technology & Engineering
ISBN: 1119715652

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AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.


Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs *Supported by the National Key Research and Development Program of China Under Grant No 2017YFA0204600, the National Natural Science Foundation of China Under Grant No 61404002, and the Science and Technology Project of Hunan Province Under Grant No 2015JC3041

Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs *Supported by the National Key Research and Development Program of China Under Grant No 2017YFA0204600, the National Natural Science Foundation of China Under Grant No 61404002, and the Science and Technology Project of Hunan Province Under Grant No 2015JC3041
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Download Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs *Supported by the National Key Research and Development Program of China Under Grant No 2017YFA0204600, the National Natural Science Foundation of China Under Grant No 61404002, and the Science and Technology Project of Hunan Province Under Grant No 2015JC3041 Book in PDF, ePub and Kindle

Abstract : An analytical model for current–voltage behavior of amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with dual-gate structures is developed. The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges, which are controlled by gate voltage. It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance (CTI /CBI ). Incorporating the proposed model with Verilog-A, a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations. Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure .