Evaluation And Modeling Of Novel Groove Pad Designs On Inter Layer Dielectric And Copper Chemical Mechanical Planarization PDF Download

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Evaluation and Modeling of Novel Groove Pad Designs on Inter-layer Dielectric and Copper Chemical Mechanical Planarization

Evaluation and Modeling of Novel Groove Pad Designs on Inter-layer Dielectric and Copper Chemical Mechanical Planarization
Author: Daniel Rosales-Yeomans
Publisher:
Total Pages: 854
Release: 2007
Genre:
ISBN:

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The present dissertation includes several studies that describe the effects of novel groovedesigns on the tribological, thermal and kinetic characteristics of ILD and copper CMP. A novelIPL-FMC 200-mm polisher, in which friction force could be obtained in two directions, was introduced and compared to lab-scale (IPL 100-mm) polisher during ILD CMP. Results showed that scaling the ILD process from 100 to 200 mm caused a transition from a mechanically-limited regime, in which it was still possible to detect thermal effects, to a higher degree of mechanical limitation where it was no longer possible to detect thermal effects. Other studies in this dissertation were related to the evaluation and modeling of novel groove designs for copper CMP optimization. Novel groove designs were divided into two groups: (1) Logarithmic-Spiral and (2) Concentric Slanted. These novel groove designs were evaluated under several operating conditions, such as wafer load, sliding velocity and slurry flow rate. This work resulted in the identification of one novel groove design from each group, which resulted in high Copper RR. The observed RR behavior was attributed to two possible scenarios. Firstly, it was believed that these novel groove designs produced a more effective control of the transport of slurry into, and the discharge of spent slurry and debris out of, the pad-wafer interface. Secondly, the variations in slurry film thickness at the pad-wafer interface generated by the different groove designs evaluated, appeared to affect the degree of contact between the pad and the wafer; hence the mechanical (pad asperities-wafer contact) and chemical(rise in temperature) contributions of the system. A novel 3-Step copper removal model wasapplied to copper CMP. The model predicted remarkably well the removal rate behavior during copper polishing for different pad groove designs. The model allowed us to perform an analysis of the effect of groove designs on the chemical and mechanical contribution of the system.


Characterization and Modeling of Mainstream and Alternative Conditioning and Polishing Technologies in Inter-Layer Dielectric and Copper Chemical Mechanical Planarization

Characterization and Modeling of Mainstream and Alternative Conditioning and Polishing Technologies in Inter-Layer Dielectric and Copper Chemical Mechanical Planarization
Author: Hyosang Lee
Publisher:
Total Pages: 536
Release: 2008
Genre:
ISBN:

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This dissertation consists of four topics that focused on investigating the fundamental characteristics of chemical mechanical planarization (CMP) processes. These are alternative and conventional pad conditioning technologies, inhibitor characteristics of slurry additives, and pad stains in copper CMP. A high pressure micro jet (HPMJ) technology was used to investigate pad conditioning and evaluated as an alternative to conventional diamond disc pad conditioning in copper and inter-layer dielectric CMP. Results showed that the HPMJ pad conditioning system had the potential of removing slurry residues and polish by-products inside pad grooves and pores on the pad surface, thus leading to improved pad life and reduced wafer-level defects. In addition, a proposed conditioning scheme, namely a combination of diamond and HPMJ pad conditioning, allowed for stable polish results in terms of removal rate and coefficient of friction (COF). The theoretical and experimental investigation of conventional diamond disc pad conditioning was performed to explore the effects of conditioner design factors on removal rate and COF in copper CMP. In this study, conditioning affected pad surface topography and was also capable of modifying the removal rate of copper by changing the COF and the reaction temperature. Both theory and experimental results showed that friction and removal rate should both decrease as the conditioned surface became less abrupt. Ammonium dodecyl sulfate (ADS), an environmentally friendly surfactant, was evaluated as an alternative inhibitor to benzotriazole (BTA) in copper CMP. Results demonstrated that the inhibition efficiencyof ADS was superior to that of BTA in terms of coefficient of friction (COF), removal rate and temperature. Spectral analysis of shear force showed the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. The characterization of experimental and numerical formation of pad staining was investigated. Pad staining was a result of material removal and it increased with polishing pressure, wafer rotation rate and polishing time. Experimental results also indicated that pad staining had no significant effect on removal rate. The experimental and simulated pad staining images demonstrated that polish by-products were advected downstream with the slurry flow, and deposited on the pad surface.


Chemical Mechanical Planarization in IC Device Manufacturing III

Chemical Mechanical Planarization in IC Device Manufacturing III
Author: Robert Leon Opila
Publisher: The Electrochemical Society
Total Pages: 664
Release: 2000
Genre: Technology & Engineering
ISBN: 9781566772600

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This volume contains the proceedings of the third international symposium on Chemical Mechanical Planarization integrated circuit device manufacturing held at the 196th Meeting of the Electrochemical Society in Honolulu, Hawaii. ( October 20 -22 1999).


Advances in Tribology

Advances in Tribology
Author: Pranav H. Darji
Publisher:
Total Pages: 280
Release: 2016-10-26
Genre:
ISBN: 953512742X

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Process Optimization and Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization

Process Optimization and Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization
Author: Xiaoyan Liao
Publisher:
Total Pages: 232
Release: 2014
Genre:
ISBN:

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This dissertation presents a series of studies related to the characterization and optimization of consumables during Chemical Mechanical Planarization (CMP). These studies are also evaluated with the purpose of reducing the cost of ownership as well as minimizing the potential environmental impacts. It is well known that pad-wafer contact and pad surface micro-structure have significant impacts on polishing performance. The first study in this dissertation investigates the effect of pad surface contact and topography on polishing performance during copper CMP. Two different types of diamond discs (3M A2810 disc and MMC TRD disc) are used to condition the polishing pad. Pad surface contact area and topography are analyzed using laser confocal microscopy and scanning electron microscopy (SEM) to illustrate how variations in pad surface micro-texture affect the copper removal rate and the coefficient of friction (COF). Polishing results show that the 3M A2810 disc generates significantly higher COF (16%) and removal rate (39%) than the MMC TRD disc. Pad surface analysis results show that the 3M A2810 disc and MMC TRD disc generate similar pad surface height probability density function and pad surface abruptness. On the other hand, the MMC TRD disc generates large flat near contact areas that correspond to fractured and collapsed pore walls while the 3M A2810 disc generates solid contact area and clear pore structures. The fractured and collapsed pore walls generated by the MMC TRD disc partly cover the adjacent pores, making the pad surface more lubricated during wafer polishing and resulting in a significantly lower COF and removal rate. In the next study, the individual "large" pad surface contact areas are differentiated from the "small" contact areas and their role in copper CMP is investigated. Surface topography and the structure of a typical individual large contact area are examined via laser confocal microscopy and SEM. In addition, the Young's Modulus of the pad surface material is simulated. A case study is presented to illustrate the role of the individual large contact area of IC1000 K-groove pad in copper CMP. SEM analysis shows that the individual large pad surface contact areas are induced by fractured pore walls and loosely attached pad debris. Simulation results indicate that individual large contact areas correspond to very low values of the Young's modulus (about 50 MPa). Such low values indicate that the pad material is soft and the summit underlying the individual large contact is not fully supported. As a result, individual large contact area implies low contact pressure and may contribute little to removal rate. Case study results confirm that the individual large contact area has minimal contribution to removal rate and indicate that the removal rate is mainly caused by small individual contact areas. In our case, small contact areas correspond to those smaller than 9 square microns. We believe that this methodology can be also applied for other kinds of pad, although the threshold values that may define "small" and "large" individual contact areas for different pads and processes need to be further investigated. In the third study, the effect of pad surface micro-texture in interlayer dielectric CMP is also investigated. Blanket 200-mm oxide wafers are polished and the polishing pad is conditioned under two different conditioning forces (26.7 and 44.5 N). Results show that when conditioning force is increased from 26.7 to 44.5 N, oxide removal rate increases by 65% while COF increases by only 7%. Pad surface contact area and topography are measured and analyzed to illustrate their effects on the oxide removal rate. While the two conditioning forces generate similar pad surface abruptness, pad surface contact area is significantly lower (by 71%) at the conditioning force of 44.5 N. Such dramatic decrease in pad surface contact area leads to a significant increase in local contact pressure and therefore results in a significant increase in oxide removal rate. The oxide removal rate and local contact pressure exhibits a Prestonian relationship. Besides the above studies on the effect of the pad surface micro-texture during blanket wafer polishing, the fourth study investigates how pad micro-texture affects dishing and erosion during shallow trench isolation (STI) patterned wafer polishing. Two different types of diamond discs (3M A2810 disc and MMC TRD disc) are used to condition the pad during wafer polishing. Dishing and erosion analysis for the patterned wafer polishing is performed using a surface profiler. To illustrate the effect of pad surface micro-texture on dishing and erosion, pad surface abruptness and mean pad summit curvature are analyzed using laser confocal microscopy. Polishing results show that the two discs generate similar blanket wafer removal rates, while the MMC TRD disc generate significantly higher dishing and erosion than the 3M A2810 disc during patterned wafer polishing. Results of pad surface micro-texture analysis show that the MMC TRD disc generates sharper asperities with higher mean pad summit curvature than the 3M A2810 disc, resulting in higher dishing and erosion. Another contribution of this dissertation is the development of a slurry film thickness quantification technique using ultraviolet-enhanced fluorescence. The technique is developed to measure slurry film thickness at any location of interest. In the next study of this dissertation, this new technique is applied to determine how two different slurry application/injection schemes (standard pad center area application method and novel slurry injection system) along with various polishing conditions such as sliding velocity, ring pressure and slurry flow rate affect slurry availability in the bow wave region of the polisher. For the standard pad center area application method, slurry is directly applied onto the pad center area and a large amount of fresh slurry flow directly off the pad surface without flowing to the pad-retaining ring interface due to the centrifugal forces. For the novel slurry injection system, slurry is introduced through an injector that is placed adjacent (


The Effects of Pad Design on Chemical Mechanical Planarization (CMP) Performance

The Effects of Pad Design on Chemical Mechanical Planarization (CMP) Performance
Author: Sunghoon Lee
Publisher:
Total Pages: 302
Release: 2006
Genre:
ISBN: 9780542825484

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The polishing results showed that MRR is dependent on the designs of micro feature distribution, which control the slurry efficiency. And, overpolishing, dishing and erosion are dominantly affected by the size of contact area.


Multi-scale Models for Wafer Surface Evolution in Chemical Mechanical Planarization

Multi-scale Models for Wafer Surface Evolution in Chemical Mechanical Planarization
Author: Xiaoping Wang
Publisher:
Total Pages: 140
Release: 2006
Genre:
ISBN:

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As device size decreases and circuit density increases, planarization technology becomes more and more important in semiconductor fabrication. Chemical mechanical planarization (CMP) has emerged as a new promising technique for its capability to achieve better local and global planarization of wafer surface. However, CMP process is sensitive to the pattern structure variation across a chip. The material removal rates are different for the regions with different pattern structure. Therefore, CMP obtains local planarization but generates global thickness variation. Two models, referred as Models I and II, are developed to investigate the pattern structure effect on the post-CMP wafer profile. Model I assumes that the pad asperities contact with the wafer directly. In developing this model, at first, the pressure distribution between a rough pad and a patterned wafer is evaluated based on Greenwood and Williamson model (1966); then, approaches are proposed to re-distribute the pressure due to pad bending to account for the effects of surrounding topography. The modified pressure is utilized in Archard's law (1953) to predict the local material removal rate and associated wafer surface evolution. This model has been verified against the experimental observations. A parametric study is conducted using this model to investigate the effects of pad roughness, bending ability, and influence length (which is defined the range of area over which the surrounding features affect the material removal rate at a given location). CMP designs for effective planarization are discussed based on Model I. Model II extends Model I to account for the abrasive particles effects. The wafer material removal is assumed to be primarily due to the slurry particles abrasion. Modeling is focused on a small region on the wafer surface. The contact pressure at this region is evaluated by Model I first. Then the material removed by a single active particle sliding over this region is estimated. After estimating the number of active particles sliding over this region during a time step, the total material removed from this region and the mean material removal rate can be calculated. By doing this across the whole wafer surface, the wafer profile evolution is obtained.