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Epitaxy of Nanostructures

Epitaxy of Nanostructures
Author: Vitaly Shchukin
Publisher: Springer Science & Business Media
Total Pages: 392
Release: 2013-03-09
Genre: Science
ISBN: 3662070669
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The main focus of the book are the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2- and 3-D strained islands. Decisive experiments on both structural and optical characterization of nanostructures are discussed to verify theoretical models and link them to practical examples.

Epitaxy of Nanostructures

Epitaxy of Nanostructures
Author: Vitaly Shchukin
Publisher:
Total Pages: 404
Release: 2014-01-15
Genre:
ISBN: 9783662070673
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Molecular Beam Epitaxy

Molecular Beam Epitaxy
Author: Mohamed Henini
Publisher: Elsevier
Total Pages: 788
Release: 2018-06-27
Genre: Science
ISBN: 0128121378
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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Molecular Beam Epitaxy

Molecular Beam Epitaxy
Author: Hajime Asahi
Publisher: John Wiley & Sons
Total Pages: 510
Release: 2019-04-15
Genre: Science
ISBN: 111935501X
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Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Epitaxy of Semiconductors

Epitaxy of Semiconductors
Author: Udo W. Pohl
Publisher: Springer Nature
Total Pages: 546
Release: 2020-07-20
Genre: Technology & Engineering
ISBN: 3030438694
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The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.

Advances in Semiconductor Nanostructures

Advances in Semiconductor Nanostructures
Author: Alexander V. Latyshev
Publisher: Elsevier
Total Pages: 553
Release: 2016-11-10
Genre: Technology & Engineering
ISBN: 0128105135
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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Epitaxial Semiconductor Nanostructures

Epitaxial Semiconductor Nanostructures
Author: Zhiming M. Wang
Publisher: Springer Verlag
Total Pages: 250
Release: 2008
Genre: Science
ISBN: 9780387746616
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Written primarily from an experimental point of view, this book is devoted to the growth and characterization of epitaxial semiconductor nanostructures, with emphasis on the following approaches: strain-driven self-organization, droplet epitaxy, high index surfaces, and lithographic or template-based patterning. A rich spectrum in the morphological evolution of multiple dimensional nanostructures will be addressed, including quantum dots, quantum dot arrays, quantum dot molecules, quantum rings, and quantum wires. Epitaxial Semiconductor Nanostructures will be an indispensable resource for a broad readership, from the beginning graduate student interested in semiconductor nanostructures to the senior scientist in academia and industry.

Metalorganic Vapor Phase Epitaxy (MOVPE)

Metalorganic Vapor Phase Epitaxy (MOVPE)
Author: Stuart Irvine
Publisher: John Wiley & Sons
Total Pages: 582
Release: 2019-10-07
Genre: Technology & Engineering
ISBN: 1119313015
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Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Nucleation Theory and Growth of Nanostructures

Nucleation Theory and Growth of Nanostructures
Author: Vladimir G. Dubrovskii
Publisher: Springer Science & Business Media
Total Pages: 610
Release: 2013-12-04
Genre: Science
ISBN: 3642396607
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Semiconductor nanostructures such as nanowires are promising building blocks of future nanoelectronic, nanophotonic and nanosensing devices. Their physical properties are primarily determined by the epitaxy process which is rather different from the conventional thin film growth. This book shows how the advanced nucleation theory can be used in modeling of growth properties, morphology and crystal phase of such nanostructures. The book represents a systematic account of modern nucleation theory in open systems, nanostructure nucleation and growth mechanisms, and possibilities for tuning the nanostructure properties to the desired values.

Thin Films Epitaxial Growth and Nanostructures

Thin Films Epitaxial Growth and Nanostructures
Author: European Materials Research Society
Publisher: Elsevier Publishing Company
Total Pages: 0
Release: 1998
Genre: Epitaxy
ISBN: 9780080436067
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This volume contains the majority of papers presented at the symposium 'Thin Films Epitaxial Growth and Nanostructures', which was held as Symposium D of the E-MRS Spring Meeting 1998 in Strasbourg on June 16th-19th 1998. Nanometer structures attract high scientific and technological attention by tailoring material properties artificially. Epitaxial growth is a very promising way to produce low-dimensional structures (two-, one-, zero-dimensional) with nanometer dimensions for a variety of materials. This symposium focussed on semiconducting films, on a basic understanding of interface formation and on formation of nanostructures and on microelectronic applications. It provided a forum for discussions of common aspects among researchers working on compound semiconductors and silicon based heterostructures. Topics treated in this symposium included microscopic description and observation of growth, influence of strain on surface morphology and defect structure, growth on patterned substrates, self assembly of nanostructures, electronic and optoelectronic devices requiring nanometer layers and atomically sharp interfaces, new device concepts and circuit architectures, alternative methods and systems.