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| Author | : 鍾宜樺 |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2022 |
| Genre | : |
| ISBN | : |
| Author | : Colin May |
| Publisher | : Springer Nature |
| Total Pages | : 763 |
| Release | : 2020-11-12 |
| Genre | : Technology & Engineering |
| ISBN | : 3030383040 |
This book shows readers how to learn analog electronics by simulating circuits. Readers will be enabled to master basic electric circuit analysis, as an essential component of their professional education. The author’s approach enables readers to learn theory as needed, then immediately apply it to the simulation of circuits based on that theory, while using the resulting tables, graphs and waveforms to gain a deeper insight into the theory, as well as where theory and practice diverge!
| Author | : University of Michigan. College of Engineering |
| Publisher | : UM Libraries |
| Total Pages | : 796 |
| Release | : 1978 |
| Genre | : Engineering schools |
| ISBN | : |
| Author | : University of Michigan |
| Publisher | : UM Libraries |
| Total Pages | : 1080 |
| Release | : 1980 |
| Genre | : Education, Higher |
| ISBN | : |
Each number is the catalogue of a specific school or college of the University.
| Author | : Shimeng Yu |
| Publisher | : Springer Nature |
| Total Pages | : 71 |
| Release | : 2022-06-01 |
| Genre | : Technology & Engineering |
| ISBN | : 3031020308 |
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
| Author | : Yongshan Ding |
| Publisher | : Springer Nature |
| Total Pages | : 203 |
| Release | : 2022-05-31 |
| Genre | : Technology & Engineering |
| ISBN | : 303101765X |
This book targets computer scientists and engineers who are familiar with concepts in classical computer systems but are curious to learn the general architecture of quantum computing systems. It gives a concise presentation of this new paradigm of computing from a computer systems' point of view without assuming any background in quantum mechanics. As such, it is divided into two parts. The first part of the book provides a gentle overview on the fundamental principles of the quantum theory and their implications for computing. The second part is devoted to state-of-the-art research in designing practical quantum programs, building a scalable software systems stack, and controlling quantum hardware components. Most chapters end with a summary and an outlook for future directions. This book celebrates the remarkable progress that scientists across disciplines have made in the past decades and reveals what roles computer scientists and engineers can play to enable practical-scale quantum computing.
| Author | : Seungbum Hong |
| Publisher | : Springer |
| Total Pages | : 280 |
| Release | : 2014-11-18 |
| Genre | : Technology & Engineering |
| ISBN | : 1489975373 |
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
| Author | : University of Michigan |
| Publisher | : |
| Total Pages | : 264 |
| Release | : 1981 |
| Genre | : Universities and colleges |
| ISBN | : |
Each number is the catalogue of a specific school or college of the University.
| Author | : Wen Siang Lew |
| Publisher | : Springer Nature |
| Total Pages | : 439 |
| Release | : 2021-01-09 |
| Genre | : Science |
| ISBN | : 9811569126 |
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
| Author | : Detlev Richter |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 268 |
| Release | : 2013-09-12 |
| Genre | : Technology & Engineering |
| ISBN | : 9400760825 |
The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements
