Emerging Nanoscale Memory Technologies
| Author | : |
| Publisher | : |
| Total Pages | : 39 |
| Release | : 2014 |
| Genre | : |
| ISBN | : |
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Emerging Nanoelectronic Devices
| Author | : An Chen |
| Publisher | : John Wiley & Sons |
| Total Pages | : 570 |
| Release | : 2015-01-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1118447743 |
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Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
Advances in Neuromorphic Hardware Exploiting Emerging Nanoscale Devices
| Author | : Manan Suri |
| Publisher | : Springer |
| Total Pages | : 217 |
| Release | : 2017-01-21 |
| Genre | : Technology & Engineering |
| ISBN | : 813223703X |
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This book covers all major aspects of cutting-edge research in the field of neuromorphic hardware engineering involving emerging nanoscale devices. Special emphasis is given to leading works in hybrid low-power CMOS-Nanodevice design. The book offers readers a bidirectional (top-down and bottom-up) perspective on designing efficient bio-inspired hardware. At the nanodevice level, it focuses on various flavors of emerging resistive memory (RRAM) technology. At the algorithm level, it addresses optimized implementations of supervised and stochastic learning paradigms such as: spike-time-dependent plasticity (STDP), long-term potentiation (LTP), long-term depression (LTD), extreme learning machines (ELM) and early adoptions of restricted Boltzmann machines (RBM) to name a few. The contributions discuss system-level power/energy/parasitic trade-offs, and complex real-world applications. The book is suited for both advanced researchers and students interested in the field.
Nanoscale Semiconductor Memories
| Author | : Santosh K. Kurinec |
| Publisher | : CRC Press |
| Total Pages | : 448 |
| Release | : 2017-07-28 |
| Genre | : Technology & Engineering |
| ISBN | : 1466560614 |
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Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Emerging Memories
| Author | : Betty Prince |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 290 |
| Release | : 2007-05-08 |
| Genre | : Technology & Engineering |
| ISBN | : 0306475537 |
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Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.
Emerging Memory Technologies
| Author | : Yuan Xie |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 321 |
| Release | : 2013-10-21 |
| Genre | : Technology & Engineering |
| ISBN | : 144199551X |
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This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
Emerging Non-volatile Memory Technologies
| Author | : Wen Siang Lew |
| Publisher | : Springer Nature |
| Total Pages | : 439 |
| Release | : 2021-01-09 |
| Genre | : Science |
| ISBN | : 9811569126 |
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This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Applications of Emerging Memory Technology
| Author | : Manan Suri |
| Publisher | : Springer |
| Total Pages | : 229 |
| Release | : 2019-07-16 |
| Genre | : Technology & Engineering |
| ISBN | : 9811383790 |
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The book intends to bring under one roof research work of leading groups from across the globe working on advanced applications of emerging memory technology nanodevices. The applications dealt in the text will be beyond conventional storage application of semiconductor memory devices. The text will deal with material and device physical principles that give rise to interesting characteristics and phenomena in the emerging memory device that can be exploited for a wide variety of applications. Applications covered will include system-centric cases such as – caches, NVSRAM, NVTCAM, Hybrid CMOS-RRAM circuits for: Machine Learning, In-Memory Computing, Hardware Security - RNG/PUF, Biosensing and other misc beyond storage applications. The book is envisioned for multi-purpose use as a textbook in advanced UG/PG courses and a research text for scientists working in the domain.
Emerging Non-Volatile Memories
| Author | : Seungbum Hong |
| Publisher | : Springer |
| Total Pages | : 280 |
| Release | : 2014-11-18 |
| Genre | : Technology & Engineering |
| ISBN | : 1489975373 |
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This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Nanotechnologies for Future Mobile Devices
| Author | : Tapani Ryhänen |
| Publisher | : Cambridge University Press |
| Total Pages | : 283 |
| Release | : 2010-02-11 |
| Genre | : Technology & Engineering |
| ISBN | : 1139483765 |
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Explore the potential for nanotechnologies to transform future mobile and Internet communications. Based on a research collaboration between Nokia, Helsinki University of Technology, and the University of Cambridge, here leading researchers review the current state-of-the art and future prospects for: • Novel multifunctional materials, dirt repellent, self-healing surface materials, and lightweight structural materials capable of adapting their shape • Portable energy storage using supercapacitor-battery hybrids based on new materials including carbon nanohorns and porous electrodes, fuel cell technologies, energy harvesting and more efficient solar cells • Electronics and computing advances reaching beyond IC scaling limits, new computing approaches and architectures, embedded intelligence and future memory technologies. • Nanoscale transducers for mechanical, optical and chemical sensing, sensor signal processing, and nanoscale actuation • Nanoelectronics to create ultrafast and adaptive electronics for future radio technologies • Flat panel displays with greater robustness, improved resolution, brightness and contrast, and mechanical flexibility • Manufacturing and innovation processes, plus commercialization of nanotechnologies.
