Electrooptic Waveguide Directional Coupler Modulator In Aluminum Gallium Arsenide Gallium Arsenide PDF Download

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A Synthesized Electrooptic Directional-coupler Modulator at 1300-nanometer Wavelength with Low Switching Voltage

A Synthesized Electrooptic Directional-coupler Modulator at 1300-nanometer Wavelength with Low Switching Voltage
Author: Chanin Laliew
Publisher:
Total Pages: 328
Release: 2002
Genre: Optical communications
ISBN:

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A low-switching-voltage electrooptic directional-coupler modulator for use in analog optical communication systems at the wavelength of 1300 nanometers was investigated. Conventional optical directional couplers have a pair of their constitutive waveguides running in parallel, and thus the coupling between them is constant throughout the length of the structure, and this gives rise to an approximate sinc-squared amplitude transfer function. This transfer or response function is nonlinear, and therefore modulators based on the constant-coupling directional coupler may only have a small modulation depth of about 2%--5% for analog communication systems. In this work, the directional coupler was modified by varying the etch depth between the two constitutive waveguides while keeping the spacing between them constant along the length of the structure, so that the modulator's response function of the desired form was obtained and exhibited high linearity. Consequently, large dynamic range and low switching voltage operation may be realized with this directional-coupler modulator. Based on this concept, the device built in AlGaAs/GaAs semiconductor material was designed, fabricated and tested. The do experimental result shows that the directional-coupler modulator, which is 1.5 cm long, has a switching voltage of about 1.8 volts--one of the lowest values for electrooptic modulators built to date. With further investigation on the RF/microwave characteristics, the directional-coupler modulator based on this design might prove to be promising for use in the optical communication mainstream.


Gallium Arsenide-based Traveling Wave Electro-optic Modulators

Gallium Arsenide-based Traveling Wave Electro-optic Modulators
Author: Yansong Cui
Publisher:
Total Pages: 0
Release: 2004
Genre:
ISBN:

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This thesis addresses research on the design and modeling of GaAs traveling wave electro-optic modulators with a highly doped layer. These modulators are in the form of a waveguide integrated with Planar Microstrip electrodes (PMS), and of a Mach-Zehnder interferometer integrated with capacitively loaded Coplanar Strips (CPS) electrodes. In both, the use of a thin highly doped layer ensures a good overlap between the applied electric field and optical mode. The design space of both PMS and loaded CPS electrodes are fully characterized. Waveguides of low propagation loss are designed. Wide bandwidth traveling wave modulators require low optical and microwave insertion loss, impedance matching, velocity matching and low half wave voltage. The simulation results predict that modulators with PMS electrodes have a limited frequency response while the modulators with CPS loaded electrodes have an electrical 3 dB bandwidth up to 70 GHz for 1cm device and Vpi of 9.4 V·cm.