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| Author | : Eric Andrew Boysen |
| Publisher | : |
| Total Pages | : 266 |
| Release | : 1995 |
| Genre | : Infrared sources |
| ISBN | : |
| Author | : Wade H. Shafer |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 341 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 1461559693 |
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this jOint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 40 (thesis year 1995) a total of 10,746 thesis titles from 19 Canadian and 144 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 40 reports theses submitted in 1995, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
| Author | : Sidney Perkowitz |
| Publisher | : Elsevier |
| Total Pages | : 229 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0080984274 |
This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time. Discusses and compares infrared, Raman, and photoluminescence methods Enables readers to choose the best method for a given problem Illustrates applications to help non-experts and industrial users, with answers to selected common problems Presents fundamentals with examples from the semiconductor literature without excessive abstract discussion Features equipment lists and discussion of techniques to help establish characterization laboratories
| Author | : Masanobu Yoshikawa |
| Publisher | : Springer Nature |
| Total Pages | : 227 |
| Release | : 2023-03-23 |
| Genre | : Technology & Engineering |
| ISBN | : 3031197224 |
This book focuses on advanced optical spectroscopy techniques for the characterization of cutting-edge semiconductor materials. It covers a wide range of techniques such as Raman, infrared, photoluminescence, and cathodoluminescence (CL) spectroscopy, including an introduction to their physical fundamentals and best operating principles. Aimed at professionals working in the research and development of semiconductors and semiconductor materials, this book looks at a broad class of materials such as silicon and silicon dioxide, nano-diamond thin films, quantum dots, and gallium oxide. In addition to the spectroscopic techniques covered, this book features a chapter devoted to the use of a scanning electron transmission microscope as an excitation source for CL spectroscopy. Written by a practicing industry expert in the field, this book is an ideal source of reference and best-practices guide for physicists, as well as materials scientists and engineers involved in the area of spectroscopy of semiconductor materials. Further, this book introduces the cutting-edge spectroscopy such as optical photothermal IR and Raman spectroscopy or terahertz time-domain spectroscopy (THz-TDS) etc.
| Author | : Dieter K. Schroder |
| Publisher | : John Wiley & Sons |
| Total Pages | : 800 |
| Release | : 2015-06-29 |
| Genre | : Technology & Engineering |
| ISBN | : 0471739065 |
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
| Author | : |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2002 |
| Genre | : |
| ISBN | : |
The objective of this work is to develop high power, high temperature semiconductor injection mid-infrared lasers through the growth and characterization of Sb-based strained layer superlattice (SLS) laser structures at 4 microns operating in continuous wave mode at room temperature. Our approach is to use lasers employing strained layer superlattice active regions made from InAs/InAsSb, InAsSb/InAsSb and InAsP/InAsSb alloys. Single step MOCVD growth has been used for the growth of the lasers. The quality of the InAsSbP based materials has been appraised by structural, optical and electrical characterization techniques. Lasers structures based on the InAsSbP material system have been grown, fabricated and tested. Lasers fabricated with the InAsP/InAsSb superlattice alloy produced laser oscillation at?=4.0 microns with output powers as high as 546 mW and 94 mW in pulsed and cw modes respectively. The InAs/InAsSb superlattice alloy also has been used for the active region of lasers with? = 3.8-4.0. At low temperature, these lasers emit with very high power: up to 1.0 W with? 3.8 microns and 842 mW with? = 4.0 microns. Finally, InAsSb/InAsSb superlattice lasers have also been employed and have demonstrated a wide range of emission flexibility. Laser oscillation between 4.2 and 4.8 microns have been measured with powers as high as 460 mW.
| Author | : |
| Publisher | : |
| Total Pages | : 24 |
| Release | : 1995 |
| Genre | : |
| ISBN | : |
| Author | : |
| Publisher | : |
| Total Pages | : 702 |
| Release | : 1995 |
| Genre | : Aeronautics |
| ISBN | : |
| Author | : N. M. Ravindra |
| Publisher | : Iop Concise Physics |
| Total Pages | : 139 |
| Release | : 2017-08-21 |
| Genre | : Science |
| ISBN | : 9781681740485 |
Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.
| Author | : N. M. Ravindra |
| Publisher | : Iop Concise Physics |
| Total Pages | : 139 |
| Release | : 2017-08-21 |
| Genre | : Science |
| ISBN | : 9781643277998 |
Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.
