Design Of High Power Wideband Microwave Frequency Class F Power Amplifiers Using Algan Gan Hemts PDF Download
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| Author | : Jeffrey Lee Tan |
| Publisher | : |
| Total Pages | : |
| Release | : 2017 |
| Genre | : |
| ISBN | : 9780355451528 |
Download Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs Book in PDF, ePub and Kindle
This thesis presents the theory, design, and implementation of two high power (>10 W) RF power amplifiers operating in the S-band (2 to 4 GHz) and employing the Class F mode of efficiency enhancement. The amplifiers are based around gallium nitride (GaN) high electron mobility transistors (HEMTs) which provide the high power capability. A complex wideband design using synthesized low-pass transforming filters as large-bandwidth matching networks is presented, followed by a more elegant narrowband design employing simple stub matching networks for impedance matching and harmonic control. Also presented in this thesis is a detailed study into the computer modeling of the GaN HEMT devices in order to accurately predict their behavior when integrated into a system. A complete small-signal circuit model is developed which is capable of predicting the scattering parameters of the devices with a high degree of accuracy to the measured behavior. Large-signal device models of increasing complexity are studied to investigate fundamental behaviors of field-effect transistors for which HEMTs are a subset. Finally, the manufacturer design kit’s computer model is investigated and verified for accuracy with the measured results.An overview of power amplifier design and classes of operation is given, and specifically Class F theory and implementation are analyzed. The efficiency enhancement by waveform shaping is studied, as well as the mechanism of waveform shaping via harmonic manipulation. Once fabricated and tested, the wideband design is shown to achieve at least 38.8 dBm output power between 2.2 to 3.3 GHz centered around 2.75 GHz, giving a fractional bandwidth of 40%. Over that range, the PA is able to sustain PAE > 40%, with a peak efficiency of 61%. The narrowband design achieves an output power at its center frequency of 3 GHz of 41.48 dBm, or ~14 W, with the PAE achieving a maximum of approximately 66%.
| Author | : Subhash Chandra Bera |
| Publisher | : Springer Nature |
| Total Pages | : 263 |
| Release | : 2022-11-29 |
| Genre | : Technology & Engineering |
| ISBN | : 9811962669 |
Download Microwave High Power High Efficiency GaN Amplifiers for Communication Book in PDF, ePub and Kindle
The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
| Author | : Jutta Kühn |
| Publisher | : KIT Scientific Publishing |
| Total Pages | : 264 |
| Release | : 2011 |
| Genre | : Power amplifiers |
| ISBN | : 3866446152 |
Download AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications Book in PDF, ePub and Kindle
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
| Author | : John L. B. Walker |
| Publisher | : Cambridge University Press |
| Total Pages | : 705 |
| Release | : 2012 |
| Genre | : Technology & Engineering |
| ISBN | : 0521760100 |
Download Handbook of RF and Microwave Power Amplifiers Book in PDF, ePub and Kindle
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
| Author | : Endalkachew Shewarega Mengistu |
| Publisher | : kassel university press GmbH |
| Total Pages | : 153 |
| Release | : 2008 |
| Genre | : |
| ISBN | : 3899583817 |
Download Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design Book in PDF, ePub and Kindle
| Author | : Roshanak Lehna |
| Publisher | : kassel university press GmbH |
| Total Pages | : 190 |
| Release | : 2017-11-13 |
| Genre | : |
| ISBN | : 373760388X |
Download Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers Book in PDF, ePub and Kindle
The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.
| Author | : Mohammed Husain Jafri |
| Publisher | : |
| Total Pages | : 220 |
| Release | : 1998 |
| Genre | : |
| ISBN | : |
Download AlGaN/GaN HEMT Model Implementation for Use in Microwave Power Amplifier Circuit Design Book in PDF, ePub and Kindle
| Author | : Andrei Grebennikov |
| Publisher | : McGraw Hill Professional |
| Total Pages | : 433 |
| Release | : 2004-09-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0071782990 |
Download RF and Microwave Power Amplifier Design Book in PDF, ePub and Kindle
This is a rigorous tutorial on radio frequency and microwave power amplifier design, teaching the circuit design techniques that form the microelectronic backbones of modern wireless communications systems. Suitable for self-study, corporate training, or Senior/Graduate classroom use, the book combines analytical calculations and computer-aided design techniques to arm electronic engineers with every possible method to improve their designs and shorten their design time cycles.
| Author | : Karun Rawat |
| Publisher | : Springer Nature |
| Total Pages | : 390 |
| Release | : 2020-03-05 |
| Genre | : Technology & Engineering |
| ISBN | : 3030388662 |
Download Bandwidth and Efficiency Enhancement in Radio Frequency Power Amplifiers for Wireless Transmitters Book in PDF, ePub and Kindle
This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.
| Author | : Andrei Grebennikov |
| Publisher | : Academic Press |
| Total Pages | : 840 |
| Release | : 2021-03-19 |
| Genre | : Technology & Engineering |
| ISBN | : 0128227540 |
Download Switchmode RF and Microwave Power Amplifiers Book in PDF, ePub and Kindle
Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations
