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Defects in Microelectronic Materials and Devices

Defects in Microelectronic Materials and Devices
Author: Daniel M. Fleetwood
Publisher: CRC Press
Total Pages: 772
Release: 2008-11-19
Genre: Science
ISBN: 1420043773

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Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe


Microelectronic Materials and Processes

Microelectronic Materials and Processes
Author: R.A. Levy
Publisher: Springer Science & Business Media
Total Pages: 992
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 9400909179

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The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.


Reliability and Failure of Electronic Materials and Devices

Reliability and Failure of Electronic Materials and Devices
Author: Milton Ohring
Publisher: Academic Press
Total Pages: 759
Release: 2014-10-14
Genre: Technology & Engineering
ISBN: 0080575528

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Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites


Microelectronic Materials

Microelectronic Materials
Author: C.R.M. Grovenor
Publisher: Routledge
Total Pages: 557
Release: 2017-10-05
Genre: Science
ISBN: 1351431544

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This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.


Photo-induced Defects in Semiconductors

Photo-induced Defects in Semiconductors
Author: David Redfield
Publisher: Cambridge University Press
Total Pages: 232
Release: 2006-03-09
Genre: Science
ISBN: 9780521024457

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This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.


Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
Total Pages: 565
Release: 2014-09-23
Genre: Technology & Engineering
ISBN: 1118313550

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.


Reliability and Failure of Electronic Materials and Devices

Reliability and Failure of Electronic Materials and Devices
Author: Milton Ohring
Publisher: Elsevier
Total Pages: 715
Release: 1998-06-12
Genre: Technology & Engineering
ISBN: 0080516076

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Suitable as a reference work for reliability professionals or as a text for advanced undergraduate or graduate students, this book introduces the reader to the widely dispersed reliability literature of microelectronic and electronic-optional devices. Reliability and Failure of Electronic Materials and Devices integrates a treatment of chip and packaging level failures within the context of the atomic mechanisms and models used to explain degradation, and the statistical handling of lifetime data. Electromigration, dielectric radiation damage and the mechanical failure of contacts and solder joints are among the failure mechanisms considered. An underlying thread of the book concerns product defects--their relation to yield and reliability, the role they play in failure, and the way they are experimentally exposed. The reader will gain a deeper physical understanding of failure mechanisms in electronic materials and devices, acquire skills in the mathematical handling of reliability data, and better appreciate future technology trends and the reliability issues they raise. Discusses reliability and failure on both the chip and packaging levels Handles the role of defects in yield and reliability Includes a tutorial chapter on the mathematics of reliability Focuses on electromigration, dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, radiation damage and the mechanical failure of packages, contacts, and solder joints Considers defect detection methods and failure analysis techniques


Micro- and Nanoelectronics

Micro- and Nanoelectronics
Author: Tomasz Brozek
Publisher: CRC Press
Total Pages: 388
Release: 2017-12-19
Genre: Technology & Engineering
ISBN: 1351831348

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Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.


Frontiers in Physics - 2019 Editor's Choice

Frontiers in Physics - 2019 Editor's Choice
Author: Alex Hansen
Publisher: Frontiers Media SA
Total Pages: 186
Release: 2020-05-19
Genre:
ISBN: 2889637093

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Frontiers in Physics – FPHY – is now in its eighth year. Up to last year, the journal received a slowly increasing trickle of manuscripts, and then during the summer… Boom! The number of manuscripts we receive started increasing exponentially. This is of course a signal to us who are associated with the journal that we are on the right track to build a first-rate journal spanning the entire field of physics. And it is not the only signal. We also see it in other indicators such as the number of views and downloads, Impact Factor and the Cite Score. Should we be surprised at this increase? If I were to describe FPHY in one word, it would be “innovation”. Attaching the names of the reviewers that have endorsed publication permanently to the published paper is certainly in this class. It ensures that the reviewers are accountable; furthermore, the level of transparency this implies ensures that any conflict of interest is detected at the very beginning of the process. The review process itself is innovative. After an initial review that proceeds traditionally, the reviewers and authors enter a back-and-forth dialog that irons out any misunderstanding. The reviewers retain their anonymity throughout the process. The entire review process and any question concerning editorial decisions is fully in the hands of active scientists. The Frontiers staff is not allowed to make any such decision. They oversee the process and make sure that the manuscript and the process leading to publication or rejection upholds the standard. FPHY is of course a gold open access journal. This is the only scientific publication model that is compatible with the information revolution. A journal’s prestige is traditionally associated with how difficult it is to publish there. Exclusivity as criterion for desirability, is a mechanism we know very well from the consumer market. However, is this criterion appropriate for scientific publishing? It is almost by definition not possible to predict the importance of a new idea – otherwise it would not have been new. So, why should journals make decisions on publishing based on predicting the possible importance of a given work. This can only be properly assessed after publication. Frontiers has removed “importance” from the list of criteria for publication. That the work is new, is another matter: the work must be new and scientifically correct. It would seem that removing the criterion of “importance” would be a risky one, but it turns out not to be. The Specialty Chief Editors who lead the 18 sections that constitute FPHY, have made this selection of papers published in FPHY in 2019. We have chosen the papers that we have found most striking. Even though this is far from a random selection, they do give a good idea of what PFHY is about. Enjoy! We certainly did while making this selection. Professor Alex Hansen (Field Chief Editor)


Charged Semiconductor Defects

Charged Semiconductor Defects
Author: Edmund G. Seebauer
Publisher: Springer Science & Business Media
Total Pages: 304
Release: 2008-11-14
Genre: Science
ISBN: 1848820593

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Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.