Defects And Diffusion In Ceramics PDF Download

This is the second issue, following DDF164, to cover recent progress in this field. The contents are contiguous with those of DDF164, and extend to late November or December 1999 (depending upon journal publication dates). As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, and of the predictions of computer models. The issue of course also includes original papers on the topic at hand covering, in this case, the synthesis and properties of zirconia-based nanocrystalline powders and ceramics (R.E. Juárez, D.G. Lamas, G.E. Lascalea and N.E. Walsöe de Reca), the optical properties of hydrogenated amorphous silicon carbide films (W.K. Choi), the structures and optical properties of defects as related to photo-induced refractive index changes in Ge-doped silica glass (M. Fujimaki and Y. Ohki) and the effects of Li intercalation in zirconia films (A.K. Jonsson, M. Strømme Mattsson, G.A. Niklasson). As well as these ceramic-specific papers, the present issue contains timely papers on other materials, such as an analysis of Diffusion Mechanisms in Ni3Al, Ni3Ge and Ni3Ga (I.V. Belova and G.E. Murch) and molecular dynamics simulations of self-diffusion in GaAs (P. Murugan and K. Ramachandran). Altogether, this again makes the present work the most up-to-date and convenient source of information on current trends in the field of Defects and Diffusion. As well as these ceramic-specific papers, the present issue contains timely papers on other materials, such as an analysis of Diffusion Mechanisms in Ni3Al, Ni3Ge and Ni3Ga (I.V. Belova and G.E. Murch) and molecular dynamics simulations of self-diffusion in GaAs (P. Murugan and K. Ramachandran). Altogether, this again makes the present work the most up-to-date and convenient source of information on current trends in the field of Defects and Diffusion. As well as these ceramic-specific papers, the present issue contains timely papers on other materials, such as an analysis of Diffusion Mechanisms in Ni3Al, Ni3Ge and Ni3Ga (I.V. Belova and G.E. Murch) and molecular dynamics simulations of self-diffusion in GaAs (P. Murugan and K. Ramachandran). Altogether, this again makes the present work the most up-to-date and convenient source of information on current trends in the field of Defects and Diffusion.