Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Copper Surface Chemistry Relevant To Chemical Mechanical Planarization Cmp PDF full book. Access full book title Copper Surface Chemistry Relevant To Chemical Mechanical Planarization Cmp.
| Author | : |
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| Total Pages | : |
| Release | : 2008 |
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| Author | : Yuzhuo Li |
| Publisher | : John Wiley & Sons |
| Total Pages | : 764 |
| Release | : 2007-10-19 |
| Genre | : Technology & Engineering |
| ISBN | : 0471719196 |
An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.
| Author | : Robert Leon Opila |
| Publisher | : The Electrochemical Society |
| Total Pages | : 664 |
| Release | : 2000 |
| Genre | : Technology & Engineering |
| ISBN | : 9781566772600 |
This volume contains the proceedings of the third international symposium on Chemical Mechanical Planarization integrated circuit device manufacturing held at the 196th Meeting of the Electrochemical Society in Honolulu, Hawaii. ( October 20 -22 1999).
| Author | : Christopher Lyle Borst |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 235 |
| Release | : 2013-11-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1461511658 |
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
| Author | : Sudipta Seal |
| Publisher | : The Electrochemical Society |
| Total Pages | : 370 |
| Release | : 2003 |
| Genre | : Technology & Engineering |
| ISBN | : 9781566774048 |
| Author | : Changhoon Choi |
| Publisher | : |
| Total Pages | : |
| Release | : 2008 |
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| Author | : Babu Suryadevara |
| Publisher | : Woodhead Publishing |
| Total Pages | : 650 |
| Release | : 2021-09-10 |
| Genre | : Technology & Engineering |
| ISBN | : 0128218193 |
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
| Author | : R. L. Opila |
| Publisher | : The Electrochemical Society |
| Total Pages | : 350 |
| Release | : 2001 |
| Genre | : Technology & Engineering |
| ISBN | : 9781566772938 |
| Author | : Robin Veronica Ihnfeldt |
| Publisher | : |
| Total Pages | : 195 |
| Release | : 2008 |
| Genre | : |
| ISBN | : |
Chemical mechanical planarization (CMP) is used in integrated circuit manufacturing to remove excess material and provide a globally planarized wafer surface. The CMP process requires slurry containing nanometer-sized abrasive particles and chemical additives which produce a mechanical and chemical synergistic effect that is responsible for the material removal rate (MRR). Because copper has become the interconnect material of choice, the focus of our research is on copper CMP. The chemical additives in the slurries control the state of the copper (CuO, Cu2, etc.) on the surface of the wafer and in the slurry and also affect the dispersion characteristics of the abrasives. This research investigated the influence of common additives (glycine, H2O2, etc.), solution pH, and presence of copper on the colloidal behavior of alumina suspensions. The colloidal behavior was characterized through measurement of zeta potential and agglomerate size distributions. The effects of common slurry additives and solution pH on the nanohardness and etch rate of the copper surface were also studied. It was found that with the addition of copper into the slurry, an increase or decrease in agglomeration of the alumina was observed depending on the state of the copper in the solution. With the addition of chemical additives and changes in the pH of the solution, the nanohardness of the copper film was observed to range from 0.05 - 20 GPa, due to the formation of different films (CuO, Cu2O, etc.) and/or changes in the compactness of the surface film from complexing reactions or dissolution. Additionally, experimental results were incorporated into a model of CMP to predict MRR and predictions were compared to experimental copper CMP data. The CMP model accounts for the chemical activity of the slurries through the abrasive size and distribution, hardness and chemical etch rate parameters. The model MRR predictions only agreed with experiment for slurries with pH>8 and small etch rates. However, for acidic slurries and slurries with large etch rates, model predictions did not agree with experiment, most likely due to using nanohardness measured under quiescent conditions.
| Author | : M.R. Oliver |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 432 |
| Release | : 2013-03-14 |
| Genre | : Technology & Engineering |
| ISBN | : 3662062348 |
This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.
