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Computer Simulations of Dislocations

Computer Simulations of Dislocations
Author: Vasily Bulatov
Publisher: Oxford University Press
Total Pages: 301
Release: 2006-11-02
Genre: Computers
ISBN: 0198526148

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The book presents a variety of methods for computer simulations of crystal defects in the form of "numerical recipes", complete with computer codes and analysis tools. By working through numerous case studies and problems, this book provides a useful starter kit for further method development in the computational materials sciences.


Dislocations in Solids

Dislocations in Solids
Author: Hideji Suzuki
Publisher: VSP
Total Pages: 696
Release: 1985-12
Genre: Science
ISBN: 9789067640435

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This volume comprises the Proceedings of the Yamada Conference IX on Dislocations in Solids, held in August 1984 in Tokyo. The purpose of the conference was two-fold: firstly to evaluate the increasing data on basic properties of dislocations and their interaction with other types of defects in solids and, secondly, to increase understanding of the material properties brought about by dislocation-related phenomena. Metals and alloys, semi-conductors and ions crystals were discussed. One of the important points of contention was the electronic state at the core of dislocation. Another was the dislocation model of amorphous structure.


Computer Simulations of Dislocations

Computer Simulations of Dislocations
Author: Vasily Bulatov
Publisher: OUP Oxford
Total Pages: 300
Release: 2006-11-02
Genre: Technology & Engineering
ISBN: 0191513660

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This book presents a broad collection of models and computational methods - from atomistic to continuum - applied to crystal dislocations. Its purpose is to help students and researchers in computational materials sciences to acquire practical knowledge of relevant simulation methods. Because their behavior spans multiple length and time scales, crystal dislocations present a common ground for an in-depth discussion of a variety of computational approaches, including their relative strengths, weaknesses and inter-connections. The details of the covered methods are presented in the form of "numerical recipes" and illustrated by case studies. A suite of simulation codes and data files is made available on the book's website to help the reader "to learn-by-doing" through solving the exercise problems offered in the book.


Statistical Analysis and Constitutive Modeling of Crystal Plasticity Using Dislocation Dynamics Simulation Database

Statistical Analysis and Constitutive Modeling of Crystal Plasticity Using Dislocation Dynamics Simulation Database
Author: Shamseddin Akhondzadeh
Publisher:
Total Pages:
Release: 2021
Genre:
ISBN:

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Most metals are crystalline materials that can undergo significant plastic (permanent) deformation when subjected to applied loading. Plastic deformation is usually accompanied by an increase in the flow stress of the material. This phenomenon is called strain hardening and is of vital importance in many engineering applications, including aerospace, automotive, and power generation industries. Developing accurate material models to predict the plastic response and hardening behavior of metals during deformation is a prerequisite to the engineering design processes, which requires a physical understanding of the underlying deformation mechanisms. In single crystals, plastic deformation of the crystal is governed by the evolution of dislocations--line defects inside the crystalline materials which marks the boundary between the slipped and unslipped regions--moving and interacting in response to the applied loading. Dislocation dynamics (DD) simulations, which track the time-space trajectories of individual dislocation lines, provide a promising tool to establish a physical link between the dislocation microstructure evolution and the strain hardening phenomenon. However, the high computational cost of DD simulations renders the accessible length and time scales to well below those which are relevant to most engineering applications. Due to this challenge, instead of directly using DD simulations for engineering applications, we have utilized DD simulations to delineate how constitutive relations of crystal plasticity (CP) can be constructed for FCC copper, based on coarse-graining of high-throughput DD simulations. This thesis consists of three main components, and we show how they fit together into a complete, physical model like three pieces of a puzzle. The first piece is a massive DD simulation database that we were able to generate thanks to recent computational advances in DD, including the subcycling time-integration algorithm and its implementation on Graphics Processing Units (GPUs). By systematically coarse-graining the database we present a strain hardening model which consists of two components: 1) a dislocation multiplication model, which accounts for slip-free multiplication, and 2) an exponential flow-rule connecting slip system shear rate to the resolved shear stress through an exponential function. These components can be thought of as the second and third puzzle pieces. By analyzing the data, it was discovered that dislocation multiplication frequently occurs on slip systems which experience zero applied shear stress (i.e., zero Schmid factor) and have a plastic strain rate of zero; we termed such multiplication slip-free multiplication and it serves as the second puzzle piece. This finding questions the assumption of the existing phenomenological expression that multiplication is proportional to the shear rate. We propose to add a correction term to the generalized Kocks-Mecking expression to account for slip-free multiplication, whose mechanistic explanation is provided. A major finding of this thesis is that DD results suggest an exponential flow-rule, in contrast to the commonly used power-law flow-rule, even in the cases where thermal fluctuations are not present. The exponential flow-rule is the third piece in the puzzle of the presented strain hardening model. We demonstrate that the observed exponential flow-rule, despite the common notion that thermal fluctuations are the responsible mechanism, can be explained by statistical properties of the dislocation links. Hence, by statistically analyzing the number density and plastic activity of links in terms of their length, we formulate a physically justified link length based flow rule which can numerically capture the exponential dependence of shear rate on shear stress. The proposed link length based flow-rule has two key components: 1) the number density of links on each slip system, which was observed to follow the sum of two exponentials distribution, and 2) an average velocity of links as a function of resolved shear stress and link length, whose fitting coefficients are independent of the loading orientation. The exponential dependence of on resolved shear stress is traced to the spatial fluctuation of the internal stress field, which can be approximated by a Laplace distribution. The proposed average velocity function incorporates the Laplace distribution in its form. This thesis shows that discrete dislocation dynamics simulations can be used to inform higher length scale models of non-phenomenological constitutive relations. The presented model captures the strain hardening as a result of slip system interactions in FCC single crystals. It works as an example for developing similar coarse-grained models based on DDD which includes additional strain hardening mechanisms such as cross-slip, or precipitate hardening. We hope that the present thesis motivates more researchers to use DDD simulations for constructing constitutive relations.


Dislocation-Density-Function Dynamics Simulation for Crystal Plasticity

Dislocation-Density-Function Dynamics Simulation for Crystal Plasticity
Author: Hing-Shun Leung
Publisher:
Total Pages:
Release: 2017-01-26
Genre:
ISBN: 9781361035603

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This dissertation, "Dislocation-density-function Dynamics Simulation for Crystal Plasticity: a Full-dynamics, All-dislocation Approach" by Hing-shun, Leung, 梁慶淳, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Current strategies of computational crystal plasticity that focus on individual atoms or dislocations are impractical for real-scale, large-strain problems even with today''s computing power. Dislocation-density based approaches are a way forward but a critical issue to address is a realistic description of the interactions between dislocations. In this thesis, a new scheme for computational dynamics of dislocation-density functions is proposed, which takes full consideration of the mutual elastic interactions between dislocations based on the Hirth-Lothe formulation. Other features considered include (i) continuity nature of the movements of dislocation densities, (ii) forest hardening, (iii) generation according to high spatial gradients in dislocation densities, and (iv) annihilation. Numerical implementation by the finite-volume method, which is well suited for flow problems with high gradients, is discussed. Numerical examples performed for a single-crystal aluminium model show typical strength anisotropy behaviour comparable to experimental observations. Furthermore, this approach has been applied to three engineering problems and discussed in detail: (i) Application on small-scale crystal plasticity successfully captures a number of key experimental features, including power-law relation between strength and size, low dislocation storage and jerky deformation. (ii) Crystal softening and enhanced cell formation are predicted by applying oscillatory loads. The simulations reveal the main mechanism for subcell formation under oscillatory loadings to be the enhanced elimination of statistically stored dislocations by the oscillatory stress, leaving behind geometrically necessary dislocations with low Schmid factors which then form the subgrain walls. This is the first simulation effort to successfully predict the cell formation phenomenon under vibratory loadings. (iii) Tensile deformation of tri-crystals with grain size ranging from 200 to 500 can be divided into three stages. The results indicate different controlling mechanisms of the flow stress at different stages of deformation and grain sizes. Changing the middle grain tilt angle with respect to the outer grains is found to affect the stress-strain relationship and the distribution of plastic strain in the three grains. A refined meso-scale scheme based on the full dynamics of dislocation-density functions is also proposed aiming to bridge across the meso scale. In this scheme, the evolution of the dislocation-density functions is derived from a coarse-graining procedure which clearly defines the relationship between the discrete-line and density representations of the dislocation microstructure. Full dynamics of the dislocation-density functions are considered based on an "all-dislocation" concept in which statistically stored dislocations are preserved and treated in the same way as geometrically necessary dislocations. Elastic interactions between dislocations are treated in accordance with Mura''s formula for eigen-stress. Dislocation generation is considered as a consequence of dislocations to maintain their connectivity, and a special scheme is devised for this purpose. The model is applied to simulate a number of intensive microstructures involving discrete dislocation events, including loop expansion and shrinkage under applied and self-stress, dipole annihilation, and Orowan


Computer Simulation in Physical Metallurgy

Computer Simulation in Physical Metallurgy
Author: Gianni Jacucci
Publisher: Springer Science & Business Media
Total Pages: 330
Release: 1986-03-31
Genre: Computers
ISBN: 9789027721921

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Crystal Growth - From Fundamentals to Technology

Crystal Growth - From Fundamentals to Technology
Author: Georg Müller
Publisher: Elsevier
Total Pages: 434
Release: 2004-07-07
Genre: Science
ISBN: 0080473075

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The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.


Microscopic Simulations of Complex Hydrodynamic Phenomena

Microscopic Simulations of Complex Hydrodynamic Phenomena
Author: Michel Mareschal
Publisher: Springer Science & Business Media
Total Pages: 437
Release: 2013-11-11
Genre: Science
ISBN: 1489923144

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This volume contains the proceedings of a NATO Advanced Study Institute which was held in Alghero, Sardinia, in July 1991. The development of computers in the recent years has lead to the emergence of unconventional ideas aiming at solving old problems. Among these, the possibility of computing directly fluid flows from the trajectories of constituent particles has been much exploited in the last few years: lattice gases cellular automata and more generally Molecular Dynamics have been used to reproduce and study complex flows. Whether or not these methods may someday compete with more traditional approaches is a question which cannot be answered at the present time: it will depend on the new computer architectures as well as on the possibility to develop very simple models to reproduce the most complex phenomena taking place in the approach of fully developed turbulence or plastic flows. In any event, these molecular methods are already used, and sometimes in an applied engineering context, to study strong shock waves, chemistry induced shocks or motion of dislocations in plastic flows, that is in domains where a fully continuum description appears insufficient. The main topic of our Institute was the molecular simulations of fluid flows. The project to hold this Institute was made three years ago, in the summer of 1989 during a NATO workshop in Brussels on the same subject.