Comprehensive Research On Stability Of Amorphous Silicon And Alloy Materials And Devices PDF Download

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Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996

Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996
Author:
Publisher:
Total Pages: 34
Release: 1997
Genre:
ISBN:

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This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.


Abstracts of Presentation

Abstracts of Presentation
Author:
Publisher:
Total Pages: 0
Release: 1987
Genre: Photovoltaic cells
ISBN:

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Stability of Amorphous Silicon Materials and Solar Cells

Stability of Amorphous Silicon Materials and Solar Cells
Author: B. L. Stafford
Publisher: American Institute of Physics
Total Pages: 352
Release: 1991
Genre: Science
ISBN:

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A reference for scientists working on amorphous silicon photovoltaic research and manufacturing. Researchers interested in solar energy should also find this volume of use.


Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology
Author:
Publisher: Newnes
Total Pages: 3572
Release: 2011-01-28
Genre: Science
ISBN: 0080932282

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Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts