Compact Optically Pumped High Power Midwave Ir Lasers PDF Download

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Compact Optically Pumped High Power Midwave IR Lasers

Compact Optically Pumped High Power Midwave IR Lasers
Author:
Publisher:
Total Pages: 22
Release: 2001
Genre:
ISBN:

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We have proposed a novel packaging scheme for high-power optically pumped mid-wave infrared lasers. The proposed device module does not require optics for alignment and is very compact in size. The module is made from copper and allows the pump laser to be moved relative to the mid-wave infrared laser by adjusting set-screws. Room temperature Fourier transform infrared spectroscopy measurements have been performed to measure the electroluminescence spectrum of the optically pumped mid-wave infrared laser which emits at 3.08 micrometers at room temperature. The best results were obtained at 77 K where we observe weak electroluminescence at approximately 2.7 micrometers. The optical pumping wavelength is 0.809 micrometers with a current of 10 A and 6 W of optical power.


Solid-State Mid-Infrared Laser Sources

Solid-State Mid-Infrared Laser Sources
Author: Irina T. Sorokina
Publisher: Springer Science & Business Media
Total Pages: 600
Release: 2003-09-04
Genre: Science
ISBN: 3540364919

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This collection of authoritative reviews by leading experts provides a broad and instructive introduction to the most advanced techniques for generating coherent light in the mid-infrared region of the spectrum. With a wealth of up-to-date references – also available online.


Reviews of Infrared and Millimeter Waves

Reviews of Infrared and Millimeter Waves
Author: Kenneth J. Button
Publisher: Springer Science & Business Media
Total Pages: 484
Release: 2013-11-11
Genre: Technology & Engineering
ISBN: 1461326893

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This book represents a compendium of the twenty most useful far-infrared (or submillimeter) lasers. In the case of each laser described here, we have been fortunate to have the author who is the pioneer and acknowledged authority describe the principles of operation and to prepare the list of emission lines. Until these lasers were developed during the past decade, the submillimeter range of the spectrum has been almost barren due to lack of sources of radiation. The lasers described here remain the only practical, powerful source of radiation between the wavelengths of one millimeter and ten micrometers. Many hundreds of emission lines have been listed here, some providing hundreds of kilowatts of peak power in pulsed operation, others providing many tens of milliwatts of continuous power. The hundreds of wavelengths of the emission lines are so closely spaced in the wavelength range between one millimeter and one-tenth millimeter that this source of radiation can be considered to be step-tunable. Of course, labora tory scientists still depend upon the black body source (mercury vapor lamp) and the Fourier transform spectrometer to provide con tinuous spectra, but for this we must deal with true energy starva tion at the sub-microwatt level. This critical review can be expected to serve as a handbook for decades in the future because it contains descriptions of fundamen tal principles and listings of fundamental physical data.


High Power Mid Wave Infrared Semiconductor Lasers

High Power Mid Wave Infrared Semiconductor Lasers
Author:
Publisher:
Total Pages: 16
Release: 2006
Genre:
ISBN:

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This project identifies key challenges for the development of high-power electrically injected MWIR laser arrays using 111-V antimonide based materials. In this approach, InGaSb quantum wells are grown on metamorphic layers on a GaSb or GaAs substrate. Doping of these layers is extremely challenging. We have obtained activation energies for Te-doped and Be-doped InAlSb. Using a novel interlayer doping schemes, we have been able to fabricate high quality PIN diodes. We have also filed a provisional patent on semiconductor conducting layers. The license for this patent is presently being negotiated by the University tech transfer office with a small business firm in new mexico. We have also demonstrated room temperature photoluminescence up to 3 gm from InGaSb quantum wells grown on GaAs substrate. Using this approach we have fabricated optically pumped vertical cavity surface emitting lasers.


Reviews of Infrared and Millimeter Waves

Reviews of Infrared and Millimeter Waves
Author: Kenneth J. Button
Publisher: Springer
Total Pages: 532
Release: 1984-01-31
Genre: Science
ISBN:

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This book represents a compendium of the twenty most useful far-infrared (or submillimeter) lasers. In the case of each laser described here, we have been fortunate to have the author who is the pioneer and acknowledged authority describe the principles of operation and to prepare the list of emission lines. Until these lasers were developed during the past decade, the submillimeter range of the spectrum has been almost barren due to lack of sources of radiation. The lasers described here remain the only practical, powerful source of radiation between the wavelengths of one millimeter and ten micrometers. Many hundreds of emission lines have been listed here, some providing hundreds of kilowatts of peak power in pulsed operation, others providing many tens of milliwatts of continuous power. The hundreds of wavelengths of the emission lines are so closely spaced in the wavelength range between one millimeter and one-tenth millimeter that this source of radiation can be considered to be step-tunable. Of course, labora tory scientists still depend upon the black body source (mercury vapor lamp) and the Fourier transform spectrometer to provide con tinuous spectra, but for this we must deal with true energy starva tion at the sub-microwatt level. This critical review can be expected to serve as a handbook for decades in the future because it contains descriptions of fundamen tal principles and listings of fundamental physical data.


Narrow Gap Semiconductors 1995

Narrow Gap Semiconductors 1995
Author: J.L Reno
Publisher: CRC Press
Total Pages: 401
Release: 2020-11-25
Genre: Science
ISBN: 1000112403

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Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.