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| Author | : Suei Huey Wong |
| Publisher | : |
| Total Pages | : 101 |
| Release | : 2007 |
| Genre | : Metal oxide semiconductor field-effect transistors |
| ISBN | : |
| Author | : Kalyan Biswas |
| Publisher | : John Wiley & Sons |
| Total Pages | : 340 |
| Release | : 2024-05-29 |
| Genre | : Technology & Engineering |
| ISBN | : 1394188951 |
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
| Author | : Kalyan Biswas |
| Publisher | : John Wiley & Sons |
| Total Pages | : 340 |
| Release | : 2024-07-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1394188943 |
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
| Author | : M. Haykel Ben Jamaa |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 205 |
| Release | : 2011-03-24 |
| Genre | : Technology & Engineering |
| ISBN | : 9400706502 |
Regular Nanofabrics in Emerging Technologies gives a deep insight into both fabrication and design aspects of emerging semiconductor technologies, that represent potential candidates for the post-CMOS era. Its approach is unique, across different fields, and it offers a synergetic view for a public of different communities ranging from technologists, to circuit designers, and computer scientists. The book presents two technologies as potential candidates for future semiconductor devices and systems and it shows how fabrication issues can be addressed at the design level and vice versa. The reader either for academic or research purposes will find novel material that is explained carefully for both experts and non-initiated readers. Regular Nanofabrics in Emerging Technologies is a survey of post-CMOS technologies. It explains processing, circuit and system level design for people with various backgrounds.
| Author | : Marc J. Madou |
| Publisher | : CRC Press |
| Total Pages | : 672 |
| Release | : 2011-06-13 |
| Genre | : Technology & Engineering |
| ISBN | : 1420055194 |
Designed for science and engineering students, this text focuses on emerging trends in processes for fabricating MEMS and NEMS devices. The book reviews different forms of lithography, subtractive material removal processes, and additive technologies. Both top-down and bottom-up fabrication processes are exhaustively covered and the merits of the different approaches are compared. Students can use this color volume as a guide to help establish the appropriate fabrication technique for any type of micro- or nano-machine.
| Author | : Niraj K. Jha |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 489 |
| Release | : 2010-12-21 |
| Genre | : Technology & Engineering |
| ISBN | : 1441976094 |
This book is about large-scale electronic circuits design driven by nanotechnology, where nanotechnology is broadly defined as building circuits using nanoscale devices that are either implemented with nanomaterials (e.g., nanotubes or nanowires) or following an unconventional method (e.g., FinFET or III/V compound-based devices). These nanoscale devices have significant potential to revolutionize the fabrication and integration of electronic systems and scale beyond the perceived scaling limitations of traditional CMOS. While innovations in nanotechnology originate at the individual device level, realizing the true impact of electronic systems demands that these device-level capabilities be translated into system-level benefits. This is the first book to focus on nanoscale circuits and their design issues, bridging the existing gap between nanodevice research and nanosystem design.
| Author | : Xin Sun |
| Publisher | : |
| Total Pages | : 136 |
| Release | : 2010 |
| Genre | : |
| ISBN | : |
| Author | : C.K. Maiti |
| Publisher | : CRC Press |
| Total Pages | : 320 |
| Release | : 2018-10-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1466503475 |
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
| Author | : Anupama B. Kaul |
| Publisher | : CRC Press |
| Total Pages | : 464 |
| Release | : 2017-12-19 |
| Genre | : Science |
| ISBN | : 1466509554 |
Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.
| Author | : Intekhab Amin |
| Publisher | : LAP Lambert Academic Publishing |
| Total Pages | : 124 |
| Release | : 2012-08 |
| Genre | : |
| ISBN | : 9783659197864 |
Scaling of MOSFET is being carried out through several dcades and we moved from micron to nano scale region. Scaling improves performance but at the same time it has some adverse effect, because as MOSFET is scaled down the source and drain come so close to each other so that the gate is loosing control over the channel is called short channel effect. Here work have been carried by doing engineering fabrication technique to reduce its SCE under 40nm channel length of an engineered device and is compared the non engineered device of having same technology to have better short channel immunity of an engineered device as compared to that of non engineered device. Since scaling means scaling of its supply voltage also if not then electric field will become a severe factor creates impact ionization and hence its performance by creating electron-holes pair so supply voltage has to be scaled down to reduce peak electric field.Its high frequency small signal analysis is also carried and compared.
