A High Power Ku-band Solid State Amplifier
Author | : Bernard D. Geller |
Publisher | : |
Total Pages | : 156 |
Release | : 1974 |
Genre | : |
ISBN | : |
Download A High Power Ku-band Solid State Amplifier Book in PDF, ePub and Kindle
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download A High Power Ku Band Solid State Amplifier PDF full book. Access full book title A High Power Ku Band Solid State Amplifier.
Author | : Bernard D. Geller |
Publisher | : |
Total Pages | : 156 |
Release | : 1974 |
Genre | : |
ISBN | : |
Author | : Paolo Colantonio |
Publisher | : John Wiley & Sons |
Total Pages | : 514 |
Release | : 2009-07-08 |
Genre | : Technology & Engineering |
ISBN | : 9780470746554 |
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
Author | : David Warren Corman |
Publisher | : |
Total Pages | : 250 |
Release | : 1989 |
Genre | : Microwave amplifiers |
ISBN | : |
Author | : National Aeronautics and Space Administration (NASA) |
Publisher | : Createspace Independent Publishing Platform |
Total Pages | : 36 |
Release | : 2018-06-24 |
Genre | : |
ISBN | : 9781721816668 |
Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here. Epp, L. and Khan, P. and Silva, A. Glenn Research Center; Jet Propulsion Laboratory IPN-PR-42-163
Author | : National Aeronautics and Space Administration (NASA) |
Publisher | : Createspace Independent Publishing Platform |
Total Pages | : 32 |
Release | : 2018-06-24 |
Genre | : |
ISBN | : 9781721816996 |
Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss 30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss
Author | : Caroline W. Waiyaki |
Publisher | : |
Total Pages | : 342 |
Release | : 2012 |
Genre | : Digital communications |
ISBN | : |
Current communication systems at Ka-band are using traveling wave tube amplifiers (TWTAs) that are bulky, costly and require high-voltage power supplies. Advances on solid state device technologies with benefits such as low supply voltage, graceful degradation, lower development cost, and high power densities have made solid state power amplifiers (SSPAs) very attractive as TWTA replacements. These attributes are beneficial to the military's need for reducing size, weight, and prime power (SWAP) and cost of the existing electronic components. The Gallium Arsenide (GaAs) device technology has been the workhorse of the solid state power amplifiers (SSPAs) for the last two decades and has demonstrated maturity at the Ka-band frequencies. Gallium Nitride (GaN), though less mature, is increasingly becoming the technology of choice for high frequency, high power applications due to its desirable attributes (i.e. high breakdown fields, high power density, and high electron saturation velocity). The SSPA modules currently available at Ka-band are based on GaAs device technology and utilize very low power (2W) and less efficient (20% power added efficiency (PAE)) monolithic microwave integrated circuits (MMICs). There is a need to improve the power and efficiency of current MMICs by incorporating on-chip planar power combining. This research focuses on the design of a highly efficient multi-watt SSPA chip at Ka-band for space, defense and commercial wireless communications applications. GaAs- and GaN- based device technologies are utilized in this research to demonstrate the feasibility of achieving multi-watt PAs with 40% PAE at Ka-band. Class AB biasing has been chosen for the design to obtain a good compromise between linearity and efficiency performances. Additionally, a novel planar power combining network that incorporates harmonic suppression, Wei-Chi, is implemented in the chip design to improve on the power and efficiency performance without degrading linearity performance. This Wei-Chi combiner performance is also compared to the Wilkinson combiner, which is commonly used in MMIC design. S-band GaN-based microwave integrated circuits (MICs) using Cree's 10W GaN HEMT packaged devices were designed to verify the feasibility of the approach. The MMIC designs for this work included a GaAs-based chip using Triquint's 0.13&mgr;m pHEMT process and a GaN-based chip on Triquint's 0.15&mgr;m GaN on SiC HEMT process. Both designs implemented the Wei-Chi combiner at Ka-band. The GaAs MMIC design has demonstrated measured output power of 22 dBm and 39.32 % PAE at 26.5 GHz. In addition, the simulated results for the GaN MMIC design are presented in this research. The GaN MMIC is expected to deliver 2W output power with 40% PAE. -- Abstract.
Author | : Mladen Božanić |
Publisher | : Springer |
Total Pages | : 347 |
Release | : 2015-12-29 |
Genre | : Technology & Engineering |
ISBN | : 3319283766 |
This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.
Author | : National Aeronautics and Space Administration (NASA) |
Publisher | : Createspace Independent Publishing Platform |
Total Pages | : 62 |
Release | : 2018-07-16 |
Genre | : |
ISBN | : 9781722803711 |
A new amplifier architecture was developed during this contract that is superior to any other solid state approach. The amplifier produced 6 watts with 4 percent efficiency over a 2 GHz band at 61.5 GHz. The unit was 7 x 9 x 3 inches in size, 5.5 pounds in weight, and the conduction cooling through the baseplate is suitable for use in space. The amplifier used high efficiency GaAs IMPATT diodes which were mounted in 1-diode circuits, called modules. Eighteen modules were used in the design, and power combining was accomplished with a proprietary passive component called a combiner plate. Mcclymonds, J. Unspecified Center...
Author | : Cheng-Chuan Feng |
Publisher | : |
Total Pages | : 118 |
Release | : 1990 |
Genre | : Power amplifiers |
ISBN | : |
The subsystems and their respective functionality of a ku-band high power amplifier are carefully documented. Figures identifying physical components, wiring, contact points, switches, and valves with their labels on the system blueprints are presented. These figures will be helpful if system performance parameter adjustments are desired. Operation, maintenance, troubleshooting and testing procedures are also included to make this thesis a self-contained operator's manual for the high power amplifier.
Author | : Irving M. Gottlieb |
Publisher | : |
Total Pages | : 266 |
Release | : 1982 |
Genre | : Technology & Engineering |
ISBN | : |