1989 IEEE International Reliability Physics Symposium Proceedings
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Total Pages | : 259 |
Release | : 1989 |
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Total Pages | : 259 |
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Author | : Ariz.) International Reliability Physics Symposium (27th : 1989 : Phoenix |
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Total Pages | : 259 |
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Author | : Reliability Physics |
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Total Pages | : 0 |
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Author | : J. W. McPherson |
Publisher | : Springer Science & Business Media |
Total Pages | : 324 |
Release | : 2010-08-05 |
Genre | : Technology & Engineering |
ISBN | : 1441963480 |
All engineers could bene?t from at least one course in reliability physics and engineering. It is very likely that, starting with your very ?rst engineering po- tion, you will be asked — how long is your newly developed device expected to last? This text was designed to help you to answer this fundamentally important question. All materials and devices are expected to degrade with time, so it is very natural to ask — how long will the product last? The evidence for material/device degradation is apparently everywhere in nature. A fresh coating of paint on a house will eventually crack and peel. Doors in a new home can become stuck due to the shifting of the foundation. The new ?nish on an automobile will oxidize with time. The tight tolerances associated with ?nely meshed gears will deteriorate with time. Critical parameters associated with hi- precision semiconductor devices (threshold voltages, drive currents, interconnect resistances, capacitor leakages, etc.) will degrade with time. In order to und- stand the lifetime of the material/device, it is important to understand the reliability physics (kinetics) for each of the potential failure mechanisms and then be able to develop the required reliability engineering methods that can be used to prevent, or at least minimize the occurrence of, device failure.
Author | : Institute of Electrical and Electronics Engineers |
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Release | : 1989 |
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Total Pages | : 259 |
Release | : 1989 |
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Total Pages | : 309 |
Release | : 1984 |
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Author | : International Reliability Physics Symposium |
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Total Pages | : 259 |
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Author | : Yoshio Nishi |
Publisher | : CRC Press |
Total Pages | : 1720 |
Release | : 2017-12-19 |
Genre | : Technology & Engineering |
ISBN | : 1420017667 |
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
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