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The IGBT Device

The IGBT Device
Author: B. Jayant Baliga
Publisher: William Andrew
Total Pages: 733
Release: 2015-03-06
Genre: Technology & Engineering
ISBN: 1455731536

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The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.


Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design
Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
Total Pages: 648
Release: 2004-04-05
Genre: Technology & Engineering
ISBN: 047166099X

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A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.


IGBT Modules

IGBT Modules
Author: Andreas Volke
Publisher:
Total Pages: 534
Release: 2012
Genre: Insulated gate bipolar transistors
ISBN: 9783000401343

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Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Author: B. Jayant Baliga
Publisher: Woodhead Publishing
Total Pages: 418
Release: 2018-10-17
Genre: Technology & Engineering
ISBN: 0081023073

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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact


Advanced High Voltage Power Device Concepts

Advanced High Voltage Power Device Concepts
Author: B. Jayant Baliga
Publisher: Springer Science & Business Media
Total Pages: 580
Release: 2011-09-21
Genre: Technology & Engineering
ISBN: 1461402697

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The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.


Modern Power Electronic Devices

Modern Power Electronic Devices
Author: Francesco Iannuzzo
Publisher: Energy Engineering
Total Pages: 504
Release: 2020-10
Genre: Technology & Engineering
ISBN: 9781785619175

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Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.


Silicon Carbide Power Devices

Silicon Carbide Power Devices
Author: B. Jayant Baliga
Publisher: World Scientific
Total Pages: 526
Release: 2006-01-05
Genre: Technology & Engineering
ISBN: 9812774521

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Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.


High Voltage Integrated Circuits

High Voltage Integrated Circuits
Author: B. Jayant Baliga
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
Total Pages: 384
Release: 1988
Genre: Technology & Engineering
ISBN:

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Very Good,No Highlights or Markup,all pages are intact.


Electronic Devices on Discrete Components for Industrial and Power Engineering

Electronic Devices on Discrete Components for Industrial and Power Engineering
Author: Vladimir Gurevich
Publisher: CRC Press
Total Pages: 432
Release: 2018-10-08
Genre: Technology & Engineering
ISBN: 1420069837

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Is it possible to design and make automatic devices for industrial and power engineering without microcircuits and microprocessors and without complex power supplies? Electronic Devices on Discrete Components for Industrial and Power Engineering answers the question above with a resounding “Yes!” by describing ten original automatic devices based exclusively on modern discrete components. The book reveals that devices based on high-voltage transistors and thyristors as well as miniature vacuum and high power gas-filled reed switches are actually much simpler to implement and more reliable than traditional devices. By identifying elementary functional modules and the basic working principles of semi-conductor devices, the text allows for the construction of complete automatic devices. It also contains an extensive reference section that includes information on modern high-voltage bipolar, FET and IGBT transistors, thyristors and triacs, as well as reed switches.