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Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems

Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
Author: Roland Winkler
Publisher: Springer Science & Business Media
Total Pages: 244
Release: 2003-10-10
Genre: Technology & Engineering
ISBN: 9783540011873

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The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.


Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems

Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
Author: Roland Winkler
Publisher: Springer
Total Pages: 248
Release: 2003-10-10
Genre: Technology & Engineering
ISBN: 9783540011873

Download Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems Book in PDF, ePub and Kindle

The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.


Topics in Two-dimensional Systems with Spin-orbit Interaction

Topics in Two-dimensional Systems with Spin-orbit Interaction
Author: Mario Francisco Borunda Bermudez
Publisher:
Total Pages:
Release: 2010
Genre:
ISBN:

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This dissertation focuses on the study of spin-dependent transport in systems with strong spin-orbit coupling within their band structure. In particular we focus on the anomalous Hall effect, the spin Hall effect, and the Aharonov-Casher effect whose origins, are linked to the presence of spin-orbit coupling. Given the theoretical controversy surrounding these effects we further simplify our studies to semiconductor systems where the band structure is much simpler than in metallic systems with heavy elements. To obtain finite analytical results we focus on reduced dimensions (two and one dimensions) which can be explored experimentally. To set the stage, we discuss the origins of the strong spin-orbit coupling in semiconductors deriving the effective interaction from the Dirac equation. We discuss in detail the skew scattering contribution to the anomalous Hall effect in two-dimensional systems, which is dominant for systems with low impurity concentrations, and find that it is reduced when the two chiral subbands are partially occupied in an electron gas and vanishes for a hole gas, regardless of the band filling. We also present calculations for all contributing mechanisms. We propose a device to test this prediction and study the crossover from the intrinsic to the extrinsic anomalous Hall effect. We calculate all contributions to the anomalous Hall effect in electron systems using the Kubo-Streda formalism. We find that all contributions vanish when both subbands are occupied and that the skew scattering contribution dominates when only the majority subband is occupied. We calculate the interference effects due to spin-orbit interaction in mesoscopic ring structures patterned from HgTe quantum wells related to the Aharonov-Casher effect and the spin Hall effect. We find that the transport properties are affected by the carrier density as well as the spin orbit interaction. We find that the conductivity is larger in hole gas systems. We also show that devices with inhomogenous spin orbit interaction exhibit an electrically controlled spin-flipping mechanism.


Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology
Author:
Publisher: Newnes
Total Pages: 3572
Release: 2011-01-28
Genre: Science
ISBN: 0080932282

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Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts


The Physics of Graphene

The Physics of Graphene
Author: Mikhail I. Katsnelson
Publisher: Cambridge University Press
Total Pages: 441
Release: 2020-03-19
Genre: Science
ISBN: 1108597475

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Leading graphene research theorist Mikhail I. Katsnelson systematically presents the basic concepts of graphene physics in this fully revised second edition. The author illustrates and explains basic concepts such as Berry phase, scaling, Zitterbewegung, Kubo, Landauer and Mori formalisms in quantum kinetics, chirality, plasmons, commensurate-incommensurate transitions and many others. Open issues and unsolved problems introduce the reader to the latest developments in the field. New achievements and topics presented include the basic concepts of Van der Waals heterostructures, many-body physics of graphene, electronic optics of Dirac electrons, hydrodynamics of electron liquid and the mechanical properties of one atom-thick membranes. Building on an undergraduate-level knowledge of quantum and statistical physics and solid-state theory, this is an important graduate textbook for students in nanoscience, nanotechnology and condensed matter. For physicists and material scientists working in related areas, this is an excellent introduction to the fast-growing field of graphene science.


Interaction and Mixing Effects in Two and One Dimensional Hole Systems

Interaction and Mixing Effects in Two and One Dimensional Hole Systems
Author: Ahrash Daneshvar
Publisher:
Total Pages:
Release: 2008
Genre:
ISBN:

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This thesis describes electrical measurements performed on low dimensional p-type devices, fabricated from GaAs/AlGaAs heterostructures. The Coulomb interaction between holes is similar to that between electrons. However, the kinetic energy is suppressed, which makes interaction effects particularly important. Holes may also be used to study band structure effects which arise from spin-orbit coupling in the valence band. The effects of Coulomb interactions in low dimensional electron systems are currently being studied extensively. Experiments presented in this thesis indicate the possible importance of Coulomb exchange interactions in both one and two dimensional hole systems (1DHSs,2DHSs). Tilted magnetic field studies of 2DHSs in the quantum Hall regime indicate that Landau levels at even filling factors will not cross. For high filling factor, this is attributed to a spin-orbit mixing effect which arises from the low symmetry ofthe system. At lower filling factor, activation-energy measurements verify that the energy gaps decrease and then increase as the field is tilted. However, the energy gap versus field dependences do not exhibit the curvature that might be expected from a perturbative anticrossing. It is speculated that the origin of this effect is a phase transition driven by the exchange interaction. Balanced arguments contrasting the relative strengths of the mixing and interactions theories are provided. The second part of this thesis describes a new method for the fabrication ofballistic 1DHSs, which exhibit clear conductance quantization. The quantization changes from even to odd multiples of e2/h as a function of the magnetic field in the plane of the heterostructure, as 'spin splitting' causes the 1D subbands to cross. Measurements of the 1D subband energy spacings are used together with the magnetic fields at which the crossings occur to calculate the in-plane g factors of the 1D subbands. These are found to increase as the number of occupied 1D subbands decreases. This enhancement of the g factor is attributed to exchange interactions; possible mixing explanations are also discussed. At higher magnetic fields, the pattern of quantization features shows that the subbands have crossed many times, and that the 1DHS can be strongly magnetized.


Exciton Transport Phenomena in GaAs Coupled Quantum Wells

Exciton Transport Phenomena in GaAs Coupled Quantum Wells
Author: Jason Leonard
Publisher: Springer
Total Pages: 59
Release: 2019-06-04
Genre: Technology & Engineering
ISBN: 9783319888347

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This thesis presents results crucial to the emerging field of indirect excitons. These specially designed quasiparticles give the unique opportunity to study fundamental properties of quantum degenerate Bose gases in semiconductors. Furthermore, indirect excitons allow for the creation of novel optoelectronic devices where excitons are used in place of electrons. Excitonic devices are explored for the development of advanced signal processing seamlessly coupled with optical communication. The thesis presents and describes the author's imaging experiments that led to the discovery of spin transport of excitons. The many firsts presented herein include the first studies of an excitonic conveyer, leading to the discovery of the dynamical localization-delocalization transition for excitons, and the first excitonic ramp and excitonic diode with no energy-dissipating voltage gradient.


Functional Materials

Functional Materials
Author: Dipti Ranjan Sahu
Publisher: BoD – Books on Demand
Total Pages: 126
Release: 2019-10-09
Genre: Technology & Engineering
ISBN: 1789840570

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Functional materials are important materials for any technological needs and the forefront of materials research. Development of functional materials and their effective applications in the frontier fields of cross-multidisciplinary research programs is unique. This book presents an overview of different types of functional materials, including synthesis, characterization and application, and up-to-date treatment of functional materials, which are needed for structural, magnetic, polymeric, electromagnetic, etc. applications. New topics based on polymeric materials and spintronic materials are given for possible applications. The chapters of the book provide a key understanding of functional materials. It is suitable for undergraduates, graduates, and professionals, including engineers, scientists, researchers, technicians, and technology managers.


Spintronics Handbook, Second Edition: Spin Transport and Magnetism

Spintronics Handbook, Second Edition: Spin Transport and Magnetism
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
Total Pages: 530
Release: 2019-05-20
Genre: Science
ISBN: 0429784376

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The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.