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Polycrystalline Silicon for Integrated Circuits and Displays

Polycrystalline Silicon for Integrated Circuits and Displays
Author: Theodore Kamins
Publisher: Springer
Total Pages: 378
Release: 1998-07-31
Genre: Technology & Engineering
ISBN: 9780792382249

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Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.


Polycrystalline Silicon for Integrated Circuits and Displays

Polycrystalline Silicon for Integrated Circuits and Displays
Author: Ted Kamins
Publisher: Springer Science & Business Media
Total Pages: 391
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1461555779

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Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.


Polycrystalline Silicon for Integrated Circuit Applications

Polycrystalline Silicon for Integrated Circuit Applications
Author: Ted Kamins
Publisher: Springer Science & Business Media
Total Pages: 302
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1461316812

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Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.


Silicides for VLSI Applications

Silicides for VLSI Applications
Author: Shyam P. Murarka
Publisher: Academic Press
Total Pages: 213
Release: 2012-12-02
Genre: Technology & Engineering
ISBN: 0080570569

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Most of the subject matter of this book has previously been available only in the form of research papers and review articles. I have not attempted to refer to all the published papers. The reader may find it advantageous to refer to the references listed.


Solar Silicon Processes

Solar Silicon Processes
Author: Bruno Ceccaroli
Publisher: CRC Press
Total Pages: 273
Release: 2016-10-03
Genre: Technology & Engineering
ISBN: 1498742661

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Polycrystalline silicon (commonly called "polysilicon") is the material of choice for photovoltaic (PV) applications. Polysilicon is the purest synthetic material on the market, though its processing through gas purification and decomposition (commonly called "Siemens" process) carries high environmental risk. While many current optoelectronic applications require high purity, PV applications do not and therefore alternate processes and materials are being explored for PV grade silicon. Solar Silicon Processes: Technologies, Challenges, and Opportunities reviews current and potential future processing technologies for PV applications of solar silicon. It describes alternative processes and issues of material purity, cost, and environmental impact. It covers limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. The book also defines purity requirements and purification processes of metallurgical grade silicon (MG-Si) and examines production of solar grade silicon by novel processes directly from MG-Si and/or by decomposition of silane gas in a fluidized bed reactor (FBR). Furthermore, the book: Analyzes past research and industrial development of low-cost silicon processes in view of understanding future trends in this field. Discusses challenges and probability of success of various solar silicon processes. Covers processes that are more environmentally sensitive. Describes limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. Defines purity requirements and purification processes of MG-Si. Examines production of solar grade silicon directly from MG-Si.