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| Author | : Christian Nauenheim |
| Publisher | : Forschungszentrum Jülich |
| Total Pages | : 159 |
| Release | : 2010 |
| Genre | : |
| ISBN | : 3893366369 |
| Author | : |
| Publisher | : |
| Total Pages | : |
| Release | : 2010 |
| Genre | : |
| ISBN | : |
Conventional CMOS-technology defined by optical lithography will reach its physical limits within the next years together with technologies adopted for data storage. This work presents and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or switches, and nano crossbar architecture, which defer these physical limits sustainably. The nano crossbar architecture consists of a functional component that is integrated between two perpendicularly crossing metallization lines. This configuration allows for a high integration density due to a minimal footprint of 4 F2 (F = minimum Feature size). The basic elements are straight metallization lines with excellent scaling capability and fabricated by competitive technologies such as nano imprint lithography. The functional component can be composed of reversibly switching TiO2, which is integrated into metal/ insulator/ metal elements (MIM). This can be operated by corresponding set- and reset- voltages between at least two resistance states, which represent a logic "0" or "1". The state is nonvolatile and can be nondestructively determined by voltages below these programming values. The field of application includes memory matrices, which are also named passive ReRAM (Resistive Random Access Memory), elements of the DRL (Diode-Resistor Logic) and RTL (Resistor-Transistor Logic), as well as router and multiplexer. Because of their passive properties, an active control circuitry, which is currently based upon CMOS, is necessary. For this reason, all materials and fabrication technologies are CMOS compatible. The developed and optimized lift-off metallization in combination with electron beam direct writing is a flexible method to fabricate metallization lines with different metals and with a width of 50 nm. The fabricated devices comprise crossbar arrays with a size of 64 × 64 bit and a 30 nm thermally evaporated electrode of a Pt/ Ti double layer. These were examined in te
| Author | : Qing Luo |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2023 |
| Genre | : Electronic books |
| ISBN | : 9781000888447 |
"This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-selective cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM Beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general"--
| Author | : Qing Luo |
| Publisher | : CRC Press |
| Total Pages | : 107 |
| Release | : 2023-04-13 |
| Genre | : Technology & Engineering |
| ISBN | : 1000888401 |
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
| Author | : Daniele Ielmini |
| Publisher | : |
| Total Pages | : 755 |
| Release | : 2016 |
| Genre | : TECHNOLOGY & ENGINEERING |
| ISBN | : 9783527680870 |
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
| Author | : Lin Yang |
| Publisher | : Forschungszentrum Jülich |
| Total Pages | : 141 |
| Release | : 2011 |
| Genre | : |
| ISBN | : 3893367071 |
| Author | : Leon Chua |
| Publisher | : Springer Nature |
| Total Pages | : 1368 |
| Release | : 2019-11-12 |
| Genre | : Computers |
| ISBN | : 331976375X |
This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.
| Author | : Ronald Tetzlaff |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 409 |
| Release | : 2013-12-11 |
| Genre | : Technology & Engineering |
| ISBN | : 1461490685 |
This book provides a comprehensive overview of current research on memristors, memcapacitors and, meminductors. In addition to an historical overview of the research in this area, coverage includes the theory behind memristive circuits, as well as memcapacitance, and meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.
| Author | : Christoph Johannes Urban |
| Publisher | : Forschungszentrum Jülich |
| Total Pages | : 169 |
| Release | : 2010 |
| Genre | : |
| ISBN | : 389336644X |
| Author | : Yang Zhang |
| Publisher | : |
| Total Pages | : 105 |
| Release | : 2014 |
| Genre | : Flash memories (Computers) |
| ISBN | : |
Recently, resistive switching (RS) memory devices have attracted increasing attentions due to their potential applications in the next-generation nonvolatile memory. Zinc Oxide (ZnO) - based RS devices possess promising features, such as well-controlled switching properties by in-situ doping and alloying, low-temperature fabrication processes, superior radiation hardness, and low cost. The goal of the research is to study the feasibility of using the transitional metal (TM) doped ZnO for making RS devices. The Fe-doped ZnO (FeZnO) is used to make the bipolar and unipolar RS. The FeZnO is grown through MOCVD. Fe is a deep-level donor in ZnO, and Fe doping leads to better device thermal stability and larger value at the high resistance state (HRS) for switching. For the Ag/FeZnO/Pt bipolar RS structures, the ratio of the HRS over the low resistance state (LRS) of 3.8×10^2 is achieved. The dominant conduction mechanisms are attributed to the Poole-Frenkel emission at the HRS and Ohmic behavior at the LRS, respectively. A FeZnO/MgO bi-layer (BL) is used to replace the FeZnO single layer (SL) to form an Ag/FeZnO/MgO/Pt bipolar RS structure. This BL device demonstrates a higher RHRS/RLRS ratio (~106) than the SL counterpart. For the Au/FeZnO/MgO/Pt unipolar RS device, the RHRS/RLRS ratio of 2.4×10^6 at 1V is achieved. In order to reduce the processing temperature, the Ni-doped ZnO/MgO BL structure is adapted to make the RS devices using the sputtering - MOCVD hybrid deposition. The Ni doping enhances the compensation of oxygen deficiency in ZnO, resulting in larger HRS values. By controlling the compliance current during the "SET" process, three different reversible RS modes, i.e. threshold switching, volatile switching, and memory switching are obtained. Compared with the memory switching, the volatile switching possesses lower power consumption and better HRS stability. Furthermore, the different compliance currents lead to the different LRS values, which could be used for the multi-level per storage cell applications. The electrical characteristics and microstructure analysis suggest that the compliance current setting affects the formation and rupture of the metallic filaments, leading to the conversion of different switching modes. The FeZnO switching resistor (R) is vertically integrated with a ZnO diode (D) to form the 1D1R structure, which overcomes the cross-talk in the 1R-based crossbar switching matrix. The 1D1R exhibits high RHRS/RLRS ratio, excellent rectifying characteristics, and robust retention. The new ZnO RS technology presents great impact on the future classes of memory devices for applications such as switching matrix, multi-level storage, and 3D non-volatile memory architecture.
