Fundamental Studies On Alternative High K Gate Dielectric Materials PDF Download
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Author | : Anand S. Deshpande |
Publisher | : |
Total Pages | : 486 |
Release | : 2005 |
Genre | : |
ISBN | : |
Download Fundamental Studies on Alternative High-k Gate Dielectric Materials Book in PDF, ePub and Kindle
Author | : Gang He |
Publisher | : John Wiley & Sons |
Total Pages | : 560 |
Release | : 2012-08-10 |
Genre | : Technology & Engineering |
ISBN | : 3527646361 |
Download High-k Gate Dielectrics for CMOS Technology Book in PDF, ePub and Kindle
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author | : Alexander A. Demkov |
Publisher | : Springer Science & Business Media |
Total Pages | : 477 |
Release | : 2006-05-24 |
Genre | : Science |
ISBN | : 1402030789 |
Download Materials Fundamentals of Gate Dielectrics Book in PDF, ePub and Kindle
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Author | : Prodyut Majumder |
Publisher | : LAP Lambert Academic Publishing |
Total Pages | : 164 |
Release | : 2012-06 |
Genre | : |
ISBN | : 9783659134364 |
Download High-K Gate Dielectrics and Diffusion Barriers in Cu Metallization Book in PDF, ePub and Kindle
Scaling of silicon technology has entered an era of "material limited device scaling," as fundamental physical limits have been reached with traditional CMOS materials. At the heart of the silicon MOSFET, new alternative high-k dielectric materials and metal gate electrodes are required to reduce gate leakage currents and decrease EOT. This book outlines the critical properties of potential high-k gate dielectric materials that provide a physically thicker layer to suppress the quantum mechanical tunneling through the dielectric layer. The emphasis is on the characterization of structural and electrical properties of such metal oxides. This book also presents the fundamentals of diffusion barriers in Cu metallization to address the issue of interconnect delay which is of increasing concern for advanced ULSI devices with rapid shrinkage of feature sizes. It highlights the effectiveness of potential candidates to meet current and future barrier requirements. The book will be of interest to those actively engaged in the field of material science and nanotechnology, focused on gate dielectric and copper metallization research.
Author | : Howard Huff |
Publisher | : Springer Science & Business Media |
Total Pages | : 740 |
Release | : 2005 |
Genre | : Science |
ISBN | : 9783540210818 |
Download High Dielectric Constant Materials Book in PDF, ePub and Kindle
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author | : Evgeni Gusev |
Publisher | : Springer Science & Business Media |
Total Pages | : 495 |
Release | : 2006-02-15 |
Genre | : Technology & Engineering |
ISBN | : 1402043678 |
Download Defects in HIgh-k Gate Dielectric Stacks Book in PDF, ePub and Kindle
The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Author | : Michel Houssa |
Publisher | : CRC Press |
Total Pages | : 614 |
Release | : 2003-12-01 |
Genre | : Science |
ISBN | : 1420034146 |
Download High k Gate Dielectrics Book in PDF, ePub and Kindle
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author | : Samares Kar |
Publisher | : Springer Science & Business Media |
Total Pages | : 515 |
Release | : 2013-06-25 |
Genre | : Technology & Engineering |
ISBN | : 3642365353 |
Download High Permittivity Gate Dielectric Materials Book in PDF, ePub and Kindle
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Author | : Gang He |
Publisher | : Wiley-VCH |
Total Pages | : 590 |
Release | : 2012-08-10 |
Genre | : Technology & Engineering |
ISBN | : 9783527646364 |
Download High-k Gate Dielectrics for CMOS Technology Book in PDF, ePub and Kindle
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author | : Samares Kar |
Publisher | : |
Total Pages | : 330 |
Release | : 2003 |
Genre | : Science |
ISBN | : |
Download Physics and Technology of High-k Gate Dielectrics I Book in PDF, ePub and Kindle