Evaluation And Modeling Of Alternative Copper And Inter Layer Dielectric Chemical Mechanical Planarization Technologies PDF Download

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Evaluation and Modeling of Alternative Copper and Inter-layer Dielectric Chemical Mechanical Planarization Technologies

Evaluation and Modeling of Alternative Copper and Inter-layer Dielectric Chemical Mechanical Planarization Technologies
Author:
Publisher:
Total Pages: 798
Release: 2006
Genre:
ISBN:

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The novel consumables studied were abrasive-free copper CMP slurries and high-pressure micro jet technology as an alternative to diamond pad conditioning. Abrasive-free slurries were found to be effective in copper removal and were shown to demonstrate similar removal rate and coefficient of friction (COF) trends as conventional abrasive slurry CMP, while possibly decreasing wafer defects. Fundamental information from the friction spectrum indicated that the periodicity of the cyclic passivation layer formation and removal in copper CMP may be on the order of 10 milliseconds. HPMJ technology was found to be a possible alternative to diamond conditioning with some decrease in removal rate. A controlled atmosphere polishing (CAP) system was used and demonstrated that gaseous additives can feasibly be introduced real-time during a polish. Addition of complexing agents were found to increase removal rates, however it was found that direct etching of copper oxide on the copper surface was not the primary mechanism responsible for removal rate increases during CMP with low oxidant concentrations. Alternatively, it was found that direct etching of the copper oxide is significant in systems containing much higher oxidant concentrations, 1 wt% hydrogen peroxide for example. It was for this reason that a third removal step, chemical dissolution, was added to the two-step removal rate model. The remainder of the work in this dissertation was concerned with characterizing and modeling the copper oxidation and copper oxide dissolution steps of the three-step model separately and applying the appropriate expressions into the CMP removal rate model. The copper oxidation process was found to demonstrate oxide growth, or passivation behavior, at pH of 5 and higher. The oxide growth process was governed by oxidized copper migration through the oxide film. The copper oxide dissolution process was controlled by dissolution of the complexing agent through a dissolution byproduct film. These steps were characterizedand applied to the three-step removal rate and predicted removal rate data quite well with one fitting parameter that varied within one order of magnitude. Two real-time experimental measurements, COF and leading pad temperature, can be input into the model to predict removal rates during a polish.


Evaluation and Modeling of Novel Groove Pad Designs on Inter-layer Dielectric and Copper Chemical Mechanical Planarization

Evaluation and Modeling of Novel Groove Pad Designs on Inter-layer Dielectric and Copper Chemical Mechanical Planarization
Author: Daniel Rosales-Yeomans
Publisher:
Total Pages: 854
Release: 2007
Genre:
ISBN:

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The present dissertation includes several studies that describe the effects of novel groovedesigns on the tribological, thermal and kinetic characteristics of ILD and copper CMP. A novelIPL-FMC 200-mm polisher, in which friction force could be obtained in two directions, was introduced and compared to lab-scale (IPL 100-mm) polisher during ILD CMP. Results showed that scaling the ILD process from 100 to 200 mm caused a transition from a mechanically-limited regime, in which it was still possible to detect thermal effects, to a higher degree of mechanical limitation where it was no longer possible to detect thermal effects. Other studies in this dissertation were related to the evaluation and modeling of novel groove designs for copper CMP optimization. Novel groove designs were divided into two groups: (1) Logarithmic-Spiral and (2) Concentric Slanted. These novel groove designs were evaluated under several operating conditions, such as wafer load, sliding velocity and slurry flow rate. This work resulted in the identification of one novel groove design from each group, which resulted in high Copper RR. The observed RR behavior was attributed to two possible scenarios. Firstly, it was believed that these novel groove designs produced a more effective control of the transport of slurry into, and the discharge of spent slurry and debris out of, the pad-wafer interface. Secondly, the variations in slurry film thickness at the pad-wafer interface generated by the different groove designs evaluated, appeared to affect the degree of contact between the pad and the wafer; hence the mechanical (pad asperities-wafer contact) and chemical(rise in temperature) contributions of the system. A novel 3-Step copper removal model wasapplied to copper CMP. The model predicted remarkably well the removal rate behavior during copper polishing for different pad groove designs. The model allowed us to perform an analysis of the effect of groove designs on the chemical and mechanical contribution of the system.


Advances in Tribology

Advances in Tribology
Author: Pranav H. Darji
Publisher:
Total Pages: 280
Release: 2016-10-26
Genre:
ISBN: 953512742X

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Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses

Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses
Author: Christopher Lyle Borst
Publisher: American Mathematical Soc.
Total Pages: 248
Release: 2002-09-30
Genre: Education
ISBN: 9781402071935

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As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.


Chemical-Mechanical Planarization of Semiconductor Materials

Chemical-Mechanical Planarization of Semiconductor Materials
Author: M.R. Oliver
Publisher: Springer
Total Pages: 428
Release: 2010-12-01
Genre: Technology & Engineering
ISBN: 9783642077388

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This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.


Interlayer Dielectrics for Semiconductor Technologies

Interlayer Dielectrics for Semiconductor Technologies
Author: Shyam P Muraka
Publisher: Elsevier
Total Pages: 459
Release: 2003-10-13
Genre: Science
ISBN: 0080521959

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Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.


Advances in Chemical Mechanical Planarization (CMP)

Advances in Chemical Mechanical Planarization (CMP)
Author: Babu Suryadevara
Publisher: Woodhead Publishing
Total Pages: 650
Release: 2021-09-10
Genre: Technology & Engineering
ISBN: 0128218193

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Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP


Chemical Mechanical Planarization of Microelectronic Materials

Chemical Mechanical Planarization of Microelectronic Materials
Author: Joseph M. Steigerwald
Publisher: John Wiley & Sons
Total Pages: 337
Release: 2008-09-26
Genre: Science
ISBN: 3527617752

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Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.


Advances in CMP Polishing Technologies

Advances in CMP Polishing Technologies
Author: Toshiro Doi
Publisher: William Andrew
Total Pages: 330
Release: 2011-12-06
Genre: Science
ISBN: 1437778593

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CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. Advances in CMP/Polishing Technologies for Manufacture of Electronic Devices presents the latest developments and technological innovations in the field - making cutting-edge R&D accessible to the wider engineering community. Most of the applications of these processes are kept as confidential as possible (proprietary information), and specific details are not seen in professional or technical journals and magazines. This book makes these processes and applications accessible to a wider industrial and academic audience. Building on the fundamentals of tribology - the science of friction, wear and lubrication - the authors explore the practical applications of CMP and polishing across various market sectors. Due to the high pace of development of the electronics and semiconductors industry, many of the presented processes and applications come from these industries. Demystifies scientific developments and technological innovations, opening them up for new applications and process improvements in the semiconductor industry and other areas of precision engineering Explores stock removal mechanisms in CMP and polishing, and the challenges involved in predicting the outcomes of abrasive processes in high-precision environments The authors bring together the latest innovations and research from the USA and Japan