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Emerging Devices for Low-Power and High-Performance Nanosystems

Emerging Devices for Low-Power and High-Performance Nanosystems
Author: Simon Deleonibus
Publisher: CRC Press
Total Pages: 410
Release: 2018-12-13
Genre: Science
ISBN: 0429858620

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The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices and architectures. Their introduction poses the issues of state variable definition, information processing, and process integration in 2D, above IC, and in 3D. This book reviews the capabilities of integrated nanosystems to match low power and high performance either by hybrid and heterogeneous CMOS in 2D/3D or by emerging devices for alternative sensing, actuating, data storage, and processing. The choice of future ICTs will need to take into account not only their energy efficiency but also their sustainability in the global ecosystem.


Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Author: Zia Karim
Publisher: The Electrochemical Society
Total Pages: 546
Release: 2011-04-25
Genre: Science
ISBN: 1566778646

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This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.


Low Power Designs in Nanodevices and Circuits for Emerging Applications

Low Power Designs in Nanodevices and Circuits for Emerging Applications
Author: Shilpi Birla
Publisher: CRC Press
Total Pages: 360
Release: 2023-11-14
Genre: Technology & Engineering
ISBN: 1000995186

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This reference textbook discusses low power designs for emerging applications. This book focuses on the research challenges associated with theory, design, and applications towards emerging Microelectronics and VLSI device design and developments, about low power consumptions. The advancements in large-scale integration technologies are principally responsible for the growth of the electronics industry. This book is focused on senior undergraduates, graduate students, and professionals in the field of electrical and electronics engineering, nanotechnology. This book: • Discusses various low power techniques and applications for designing efficient circuits. • Covers advance nanodevices such as FinFETs, TFETs, CNTFETs. • Covers various emerging areas like Quantum-Dot Cellular Automata Circuits and FPGAs and sensors. • Discusses applications like memory design for low power applications using nanodevices. The number of options for ICs in control applications, telecommunications, high-performance computing, and consumer electronics continues to grow with the emergence of VLSI designs. Nanodevices have revolutionized the electronics market and human life; it has impacted individual life to make it more convenient. They are ruling every sector such as electronics, energy, biomedicine, food, environment, and communication. This book discusses various emerging low power applications using CMOS and other emerging nanodevices.


Integrated Nanodevice and Nanosystem Fabrication

Integrated Nanodevice and Nanosystem Fabrication
Author: Simon Deleonibus
Publisher: CRC Press
Total Pages: 306
Release: 2017-11-22
Genre: Science
ISBN: 135172178X

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Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.


Convergence of More Moore, More than Moore and Beyond Moore

Convergence of More Moore, More than Moore and Beyond Moore
Author: Simon Deleonibus
Publisher: CRC Press
Total Pages: 306
Release: 2021-02-15
Genre: Science
ISBN: 1000064557

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The era of Sustainable and Energy Efficient Nanoelectronics and Nanosystems has come. The research and development on Scalable and 3D integrated Diversified functions together with new computing architectures is in full swing. Besides data processing, data storage, new sensing modes and communication capabilities need the revision of process architecture to enable the Heterogeneous co integration of add-on devices with CMOS: the new defined functions and paradigms open the way to Augmented Nanosystems. The choices for future breakthroughs will request the study of new devices, circuits and computing architectures and to take new unexplored paths including as well new materials and integration schmes. This book reviews in two sections, including seven chapters, essential modules to build Diversified Nanosystems based on Nanoelectronics and finally how they pave the way to the definition of Nanofunctions for Augmented Nanosystems.


Outlooking beyond Nanoelectronics and Nanosystems

Outlooking beyond Nanoelectronics and Nanosystems
Author: Simon Deleonibus
Publisher: CRC Press
Total Pages: 419
Release: 2024-08-09
Genre: Technology & Engineering
ISBN: 1040113117

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The fifth volume in Jenny Stanford Series on Intelligent Nanosystems, entitled Outlooking Beyond Nanoelectronics and Nanosystems: Ultra Scaling, Pervasiveness, Sustainable Integration, and Biotic Cross-Inspiration, collects global reviews on (1) the historical cross-inspiration of technologies with nature, their evolution towards nanoelectronic and nanosystem components and their sustainability; (2) new materials, techniques, and pervasive applications out of mainstream; and (3) memristor foundation and new bioengineering developments. The covered topics include ultra scaling with its limits, alternatives and prospects, superior energy efficiency and pervasiveness to non-conventional applications; the evaluation of information technology sustainability, environmental impact and life cycles; prospective fabrication techniques, materials and components, their multifunctional extensions for characterization, fabrication, high-resolution quantum sensing, energy and information storage; life science–inspired memristors and edge of chaos; and bioengineering by nanostructured hybrid smart systems.


Fully Depleted Silicon-On-Insulator

Fully Depleted Silicon-On-Insulator
Author: Sorin Cristoloveanu
Publisher: Elsevier
Total Pages: 386
Release: 2021-08-04
Genre: Technology & Engineering
ISBN: 0128231653

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Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications


Nanotechnology For Electronics, Biosensors, Additive Manufacturing And Emerging Systems Applications

Nanotechnology For Electronics, Biosensors, Additive Manufacturing And Emerging Systems Applications
Author: Faquir C Jain
Publisher: World Scientific
Total Pages: 210
Release: 2021-06-22
Genre: Technology & Engineering
ISBN: 9811242836

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Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.


Integrated Nanodevice and Nanosystem Fabrication

Integrated Nanodevice and Nanosystem Fabrication
Author: Simon Deleonibus
Publisher: CRC Press
Total Pages: 256
Release: 2017-11-22
Genre: Science
ISBN: 1351721771

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Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology. Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.