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Electromigration Inside Logic Cells

Electromigration Inside Logic Cells
Author: Gracieli Posser
Publisher: Springer
Total Pages: 134
Release: 2016-11-26
Genre: Technology & Engineering
ISBN: 3319488996

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This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.


Reliability Characterisation of Electrical and Electronic Systems

Reliability Characterisation of Electrical and Electronic Systems
Author:
Publisher: Elsevier
Total Pages: 274
Release: 2014-12-24
Genre: Technology & Engineering
ISBN: 1782422250

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This book takes a holistic approach to reliability engineering for electrical and electronic systems by looking at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability for a range of devices. The text describes the reliability behavior of electrical and electronic systems. It takes an empirical scientific approach to reliability engineering to facilitate a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation. After introducing the fundamentals and background to reliability theory, the text moves on to describe the methods of reliability analysis and charactersation across a wide range of applications. Takes a holistic approach to reliability engineering Looks at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability Facilitates a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation


Hot Carrier Degradation in Semiconductor Devices

Hot Carrier Degradation in Semiconductor Devices
Author: Tibor Grasser
Publisher: Springer
Total Pages: 518
Release: 2014-10-29
Genre: Technology & Engineering
ISBN: 3319089943

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.


Nanometer CMOS ICs

Nanometer CMOS ICs
Author: Harry J.M. Veendrick
Publisher: Springer
Total Pages: 639
Release: 2017-04-28
Genre: Technology & Engineering
ISBN: 3319475975

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This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.


1998 IEEE International Integrated Reliability Workshop Final Report

1998 IEEE International Integrated Reliability Workshop Final Report
Author: IEEE Reliability Society
Publisher: IEEE
Total Pages: 140
Release: 1998
Genre: Technology & Engineering
ISBN: 9780780348813

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The International Integrated Reliability Workshop provides a forum for sharing new approaches to achieve and maintain microelectronic component reliability. Topics include: contributors to failure; waver level reliability; building in reliability; and reliability test structures.


Metrology and Physical Mechanisms in New Generation Ionic Devices

Metrology and Physical Mechanisms in New Generation Ionic Devices
Author: Umberto Celano
Publisher: Springer
Total Pages: 191
Release: 2016-06-18
Genre: Science
ISBN: 3319395319

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This thesis presents the first direct observations of the 3D-shape, size and electrical properties of nanoscale filaments, made possible by a new Scanning Probe Microscopy-based tomography technique referred to as scalpel SPM. Using this innovative technology and nm-scale observations, the author achieves essential insights into the filament formation mechanisms, improves the understanding required for device optimization, and experimentally observes phenomena that had previously been only theoretically proposed.